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A trench type vdmos

A trench type, trench technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of high source-drain capacitance Cds, restricting reverse withstand voltage, affecting the dynamic characteristics of devices, etc. The effect of increasing the reverse blocking voltage

Inactive Publication Date: 2019-02-01
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the bulk field plate type VDMOS also has some disadvantages. The electric field distribution in the drift region is as follows: figure 2 As shown, it can be seen that since the potential on the entire field plate is the same, the electric field value in the drift region decreases along the vertical direction, which restricts the further improvement of the reverse withstand voltage
At the same time, since the body field plate is connected to the source of VDMOS, its source-drain capacitance Cds will be high, which affects the dynamic characteristics of the device

Method used

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Examples

Experimental program
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Effect test

Embodiment 1

[0016] Such as image 3 As shown, a trench type VDMOS in this example includes a metallized drain 11, an N+ substrate 1, an N-drift region 2 and a metallized source 4 that are sequentially stacked from bottom to top; the N-drift region 2 has internal trenches 3, P-type doped regions 5, N-type heavily doped regions 6, P-type heavily doped regions 7, and trenches 8, and the P-type doped regions 5 are located on both sides of the internal trenches 3, and the side of the P-type doped region 5 is in contact with the side of the trench 3 in the body; the N-type heavily doped region 6 is located on the upper surface of the P-type doped region 5, and the N-type heavily doped region 6 The upper surface is in contact with the lower surface of the metallized source 4; the P-type heavily doped region 7 is located between the internal trench 3 and the N-type heavily doped region 6 and is respectively separated from the internal trench 3 and the N-type heavily doped region. region 6 contac...

Embodiment 2

[0032] The structure of this example is based on Example 1, all N-type materials in Example 1 are replaced by P-type materials, all P-type materials are replaced by N-type materials, and the negative charges in the polysilicon column 13 are replaced by positive charges .

[0033] When making devices, semiconductor materials such as silicon carbide, gallium arsenide, or silicon germanium can also be used instead of silicon.

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Abstract

The invention belongs to the technical field of semiconductors, in particular to a trench type VDMOS device. The invention mainly has a polysilicon column wrapped by a silicon dioxide layer in a groove in the body, and uniform negative charges are stored in the polysilicon column. The shape of the polysilicon column is wide at the top and narrow at the bottom, and the thickness of the silicon dioxide between it and the silicon wafer increases from top to bottom. When the device is reverse-blocked, a lateral electric field is generated between the N-type drift region and the negative charges in the polysilicon pillar to assist in depleting the drift region. Since the potential of the N-type drift region gradually decreases from bottom to top, and the thickness of silicon dioxide on the sidewall of the polysilicon column increases from top to bottom, the lateral electric field distribution in the drift region is more uniform, so that the vertical electric field is closer to the rectangular distribution, improving The reverse blocking voltage of the device. At the same time, since the body field plate structure connected to the source electrode is not used, the gate-to-drain capacitance Cds in the present invention is relatively low.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a trench type VDMOS device. Background technique [0002] Power VDMOS is a multi-subconductor device, which has the advantages of fast switching speed, high input impedance, and easy driving. An ideal VDMOS should have low on-resistance, switching loss and high blocking voltage. However, there is a restraint effect between on-resistance and breakdown voltage, on-resistance and switching loss, which limits the development of power VDMOS. In order to improve device performance and reduce on-resistance, academician Chen Xingbi proposed a super-junction VDMOS structure. Compared with the traditional structure, the super-junction structure obtains a better trade-off relationship between device withstand voltage and on-resistance. Under the same device withstand voltage condition, the on-resistance of VDMOS with super-junction structure is smaller. [0003] Since the super-ju...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/423H01L21/336
CPCH01L29/4236H01L29/42368H01L29/42372H01L29/66734H01L29/7813
Inventor 任敏李爽钟子期包惠萍李泽宏张金平高巍张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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