A ldmos device with multiple trenches

A trench and device technology, used in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of uneven doping in the RESURF region, reduced device breakdown voltage, and large drift region area, so as to optimize the electric field. effect of distribution, improvement of on-resistance, and increase of reverse blocking voltage
CN111640787BActive Publication Date: 2021-08-24UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
UNIV OF ELECTRONICS SCI & TECH OF CHINA
Publication Date
2021-08-24

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Abstract

The invention relates to an LDMOS device with multiple grooves, belonging to the technical field of power semiconductors. The present invention provides an LDMOS device with multiple trenches, which changes the morphology of the diffusion region of the second conductivity type by trench etching to realize evenly distributed doping, so as to optimize the electric field distribution on the surface and reduce the drift region In addition, the morphology of the junctions on both sides is improved, the reverse blocking voltage of the device is improved, and the on-resistance can be improved at the same time.
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Description

technical field

[0001] The invention belongs to the technical field of power semiconductors, in particular to an LDMOS device with multiple grooves. Background technique

[0002] LDMOS transistors are one of the most widely used devices in smart power integrated circuits. Among many power devices, LDMOS, as the core device of power integrated circuits, has become the research object of many scholars at home and abroad because of its simple design, easy integration, superior frequency, switching characteristics and many other advantages. However, the serious contradictory relationship between breakdown voltage and specific on-resistance in lateral high-voltage power devices has always limited the application of LDMOS at high voltage and high current. Therefore, designing an LDMOS that can meet a certain withstand voltage requirement and has a low specific on-resistance is an important development direction of power semiconductor technology at present.

[0003] The tradition...

Claims

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