A ldmos device with multiple trenches
A trench and device technology, used in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of uneven doping in the RESURF region, reduced device breakdown voltage, and large drift region area, so as to optimize the electric field. effect of distribution, improvement of on-resistance, and increase of reverse blocking voltage
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[0024] The principles and features of the present invention are described below in conjunction with the accompanying drawings, and the examples given are only used to explain the present invention, and are not intended to limit the scope of the present invention.
[0025] Such as figure 2 As shown, the LDMOS device with multiple trenches provided by the first embodiment of the present invention includes a second conductivity type substrate 201, a first conductivity type drift region 202, a second conductivity type body region 203, a highly doped third The second conductivity type body contact region 204, the first conductivity type source region 205, the first conductivity type drain region 206, the dielectric layer 208, the source electrode 209, the planar gate structure and the drain electrode 211;
[0026] The drift region 202 of the first conductivity type is located on the substrate 201 of the second conductivity type; the body region 203 of the second conductivity type ...
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