A trench-structured vdmos
A trench and inner trench technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of restricting reverse withstand voltage, affecting device dynamic characteristics, source-drain capacitance Cds, etc., and improving reverse blocking voltage. , The effect of low gate-drain capacitance Cds and uniform lateral electric field distribution
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Embodiment 1
[0016] like image 3 As shown, a VDMOS with a trench structure in this example includes a metallized drain 11, an N+ substrate 1, an N-drift region 2, and a metallized source 4 that are sequentially stacked from bottom to top; Region 2 has internal trenches 3, P-type doped regions 5, N-type heavily doped regions 6, P-type heavily doped regions 7, and trenches 8, and the P-type doped regions 5 are located in the internal trenches on both sides. Between the grooves 3, and the side of the P-type doped region 5 is in contact with the side of the groove 3 in the body; the N-type heavily doped region 6 is located on the upper surface of the P-type doped region 5, and the N-type heavily doped region 6 The upper surface is in contact with the lower surface of the metallized source electrode 4; the P-type heavily doped region 7 is located between the internal trench 3 and the N-type heavily doped region 6 and is located between the internal trench 3 and the N-type heavily doped region ...
Embodiment 2
[0036] The structure of this example is based on Example 1. All N-type materials in Example 1 are replaced with P-type materials, all P-type materials are replaced with N-type materials, and negative charges in the polysilicon 13 are replaced with positive charges.
[0037] When making devices, semiconductor materials such as silicon carbide, gallium arsenide, or silicon germanium can also be used instead of silicon.
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