Ion fluorescence super-resolution imaging method

Abstract

The invention relates to an ion fluorescence super-resolution imaging method. The method includes following steps: (1), preparing a to-be-irradiated sample; (2), fixing the to-be-irradiated sample ona sample table, and putting a fluorescent target close to the rear of the to-be-irradiated sample; (3), using ion beam current to irradiate a random position of sample interest area; (4), enabling anincident single ion to sequentially penetrate to to-be-irradiated sample and the fluorescent target, wherein ion excitation fluorescence is generated in the fluorescent target, and the fluorescent after going through a high power objective is collected by imaging equipment to generate a single-ion fluorescent microscopic image; (5), subjecting the single-ion fluorescent microscopic image and stagechange signals acquired in a same time period to correlation mapping, outputting and storing; (6), maintaining the to-be-irradiated sample under ion irradiation, and enabling ion irradiation to traverse the sample interest area to reach imaging data size requirements; (7), acquiring single-ion irradiation high-accuracy position coordinates, and drawing according to the single-ion irradiation high-accuracy position coordinates and state change signal correlation mapping. By the ion fluorescence super-resolution imaging method, imaging resolution can be improved.

Description

technical field [0001] The invention relates to an ion imaging technology, in particular to an ion fluorescence super-resolution imaging method. Background technique [0002] At present, the ion imaging technology put into use is mainly divided into micro-beam scanning imaging technology and secondary particle emission imaging technology. (1) The micro-beam scanning imaging technology uses a micro-slit aperture to limit the object size and divergence angle of the beam, and then uses a combination of electromagnetic focusing magnets to focus the ion beam with energy from MeV to GeV to a micron-sized beam spot. It is directly given by the scanning parameters, and then scans the micron beam spot to irradiate the interest area of ​​the sample through electromagnetic deflection scanning, and correlates the beam spot scanning position with the sample irradiation effect event to obtain the micro-area distribution of the sample irradiation effect (Metzger S , Dreute J, Heinrich Wet...

AI Technical Summary

Problems solved by technology

[0003] However, the research on the effect of ion irradiation is usually carried out with ion beams of 1~100 MeV / u. Due to the characteristics of high energy and high energy dispersion of the experimental beam, the imaging resolution of ion microbeam scanning imaging technology and secondary particle emission imaging technology is very limited. None of them can be better than 0.5 microns, and the resolution becomes worse with the increase of energy, and single event effect imaging with energy higher than 100MeV / u cannot be realized with existing technology

On the other hand, there is a big gap between the resolution of existing ion imaging technology and the resolution requirements of engineering practice. The study of its anti-irradiation characteristics requires corresponding imaging resolution of tens of nanometers

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