LDO (low dropout regulator) circuit and LDO implementing method
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- GUANGZHOU HUIZHI MICROELECTRONICS
- Publication Date
- 2018-02-13
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Abstract
Description
technical field
[0001] The invention relates to the technical field of semiconductor integrated circuits, in particular to a low dropout linear regulator (LDO, Low Dropout Regulator) circuit and a method for realizing the LDO. Background technique
[0002] Traditional linear regulators generally require the input voltage to be at least 2V higher than the output voltage, otherwise the linear regulator cannot work properly. However, in some cases, such conditions are relatively harsh. For example, in an application environment where the input voltage is 5V and the output voltage is 3.3V, the voltage difference between the input voltage and the output voltage is only 1.7V. Obviously, the voltage difference of 1.7V It does not meet the working conditions of traditional linear regulators. Therefore, in response to this situation, chip manufacturers have developed LDO-like voltage conversion chips. Moreover, because the LDO has outstanding advantages such as simple structure, lo...