Semiconductor device

A semiconductor and device technology, which is applied in the field of semiconductor devices including electrically rewritable non-volatile memory, can solve the problems of increasing memory cells and difficulty in maintaining a constant programming voltage level.

Inactive Publication Date: 2016-09-07
RENESAS ELECTRONICS CORP
View PDF7 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this case, the increase in the number of simultaneously programmed memory cells makes it difficult to keep the voltage level of the programming voltage constant

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device
  • Semiconductor device
  • Semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0032] [Overall structure of semiconductor device]

[0033] figure 1 is a block diagram showing the configuration of the semiconductor device according to the first embodiment. figure 1 The configuration of a microcomputer (MCU) 1 incorporating a flash memory module 16 as one example of a semiconductor device is shown. The boosted voltage supply circuit 400 described in this embodiment is also applicable to a semiconductor device in which only the flash memory module 16 is mounted on a single silicon substrate.

[0034] refer to figure 1 The microcomputer 1 is formed on a single semiconductor chip made of, for example, single crystal silicon using CMOS (Complementary Metal Oxide Semiconductor) integrated circuit manufacturing technology or the like.

[0035] Such as figure 1 As shown in , the microcomputer 1 includes a central processing unit (CPU) 2, a random access memory (RAM) 5, and a flash memory module (FMDL) 6. The central processing unit 2 includes an instruction ...

no. 2 example

[0126] [Structure of Boost Voltage Supply Circuit]

[0127] Figure 11 is a schematic diagram showing the configuration of a boosted voltage supply circuit 400A in the semiconductor device according to the second embodiment. Figure 11 The boost voltage supply circuit 400A is Image 6 A modified example of the boosted voltage supply circuit 400 in , and includes a control current generating circuit 105 instead of according to Image 6 The control current generation circuit 104 is shown in the first embodiment.

[0128] More specifically, refer to Figure 11 , the control current generating circuit 105 includes NMOS transistors Q405, Q406. The NMOS transistor Q405 is diode-coupled, and is coupled between the drain (node ​​N401) of the PMOS transistor Q402 and the ground node GND. NMOS transistor Q406 is coupled between voltage dividing node 610 (coupling node between resistance elements R401 and R402 ) of voltage dividing circuit 102 and ground node GND (ie coupled in para...

no. 3 example

[0153] [Structure of Boost Voltage Supply Circuit]

[0154] Figure 14 is a schematic diagram showing the configuration of the boosted voltage supply circuit 500 in the semiconductor device according to the third embodiment. Figure 14 The boost voltage supply circuit 500 in the Image 6 A modified example of the boost voltage supply circuit 400 in FIG. More specifically, Figure 14 The boost voltage supply circuit 500 in the different Image 6 The boost voltage supply circuit 400 in FIG. 1 is that the boost voltage supply circuit 500 also includes a temperature-dependent current source 106 that increases the output current as the temperature increases.

[0155] refer to Figure 14 , the temperature-dependent current source 106 includes a constant voltage circuit 501, a resistance element R501, and NMOS transistors Q501, Q502. The constant voltage circuit 501 is configured with, for example, a BGR (Band Gap Reference) circuit, and outputs a constant voltage regardless of...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a semiconductor device. To maintain constant an output voltage of a boosted voltage circuit even when a program current of a nonvolatile memory increases; in a boosted voltage circuit provided in a semiconductor device, an output voltage of a charge pump is detected by a voltage dividing circuit, and on-off control is performed on an oscillation circuit for driving the charge pump so that the detected output voltage becomes constant. Further, an output current of the charge pump is detected, and a control current according to a magnitude of the detected output current is generated. The control current is fed into or drawn from a coupling node between a plurality of series-coupled resistance elements configuring the voltage dividing circuit.

Description

[0001] Related Application Cross Reference [0002] The disclosure of Japanese Patent Application No. 2015-036743 filed on February 26, 2015, including specification, drawings and abstract, is hereby incorporated by reference in its entirety. technical field [0003] The present invention relates to a semiconductor device, and particularly to a semiconductor device including an electrically rewritable nonvolatile memory. Background technique [0004] In a non-volatile memory such as flash memory, during programming, a write current flows through a memory cell undergoing writing. In this case, the increase in the number of simultaneously programmed memory cells makes it difficult to keep the voltage level of the program voltage constant. [0005] To solve this problem, the flash memory device described in Japanese Unexamined Patent Publication No. 2007-193936 (Patent Document 1) includes, in addition to the flash memory cell array, a plurality of dummy programming current ge...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/10G11C16/30
CPCG11C16/10G11C5/145G11C7/04G11C16/0425G11C16/26G11C16/30
Inventor 加藤一明
Owner RENESAS ELECTRONICS CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap