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Heater for preparing crystalline silicon ingot and ingot furnace

A heater, crystalline silicon technology, used in crystal growth, single crystal growth, chemical instruments and methods, etc.

Pending Publication Date: 2018-02-16
JIANGSU XIEXIN SILICON MATERIAL TECH DEV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Based on this, it is necessary to provide a heater and an ingot furnace for preparing crystalline silicon ingots for the problem of keeping the solid-liquid interface flat

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  • Heater for preparing crystalline silicon ingot and ingot furnace
  • Heater for preparing crystalline silicon ingot and ingot furnace
  • Heater for preparing crystalline silicon ingot and ingot furnace

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Embodiment Construction

[0026] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, the present invention can be implemented in many other ways different from those described here, and those skilled in the art can make similar improvements without departing from the connotation of the present invention, so the present invention is not limited by the specific embodiments disclosed below.

[0027] It should be noted that when an element is referred to as being “fixed” to another element, it can be directly on the other element or there can also be an intervening element. When an element is referred to as being "connected to" another element, it can be directly connected to t...

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PUM

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Abstract

The invention relates to a heater for preparing a crystalline silicon ingot and an ingot furnace. The heater comprises a top heater and a lateral heater or the heater comprises the top heater, the lateral heater and a bottom heater. The ingot furnace comprises the heater. The resistance distribution of the top heater, the lateral heater and the bottom heater is changed, namely, the resistance distribution of the top heater is gradually reduced from middle to periphery, the resistance distribution of the lateral heater is gradually reduced from top to bottom and the resistance distribution of the bottom heater is gradually reduced from middle to periphery, so that the uneven distribution of the resistance is realized, the solid-liquid interface under the crystal forming state can be adjusted in the process of preparing the crystalline silicon ingot and the solid-liquid interface is flattened.

Description

technical field [0001] The invention relates to the field of silicon ingot casting ingot preparation, in particular to a heater and an ingot casting furnace for preparing crystalline silicon ingots. Background technique [0002] At present, in the process of preparing crystalline silicon ingots using the directional solidification method, the crucible is placed in an ingot furnace for heating. Among the heaters used in the ingot furnace, the resistance distribution of each heater is uniform, and the heat generation It is also the same in all regions. [0003] In the process of realizing the traditional technology, the applicant found the following problems: [0004] The resistance distribution of a single heater is uniform, and its calorific value is the same in each area. Due to the influence of top airflow and uneven heat dissipation, in the process of preparing crystalline silicon ingots by directional solidification, the solid-liquid interface It presents a "W" shape, ...

Claims

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Application Information

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IPC IPC(8): C30B11/02C30B29/06
CPCC30B11/002C30B11/003C30B11/02C30B29/06
Inventor 武鹏王双丽徐岩
Owner JIANGSU XIEXIN SILICON MATERIAL TECH DEV