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Workpiece Handling Technology

A technology for workpieces and processing parameters, which is applied in the fields of electrical components, semiconductor/solid-state device manufacturing, semiconductor/solid-state device testing/measurement, etc.

Active Publication Date: 2021-06-15
VARIAN SEMICON EQUIP ASSOC INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The artifact is then processed using this first set of processing parameters

Method used

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Embodiment Construction

[0017] As described above, processing is often non-uniform, resulting in different properties across the semiconductor workpiece. Furthermore, in certain processes, it can be difficult to eliminate this non-uniformity. For example, a deposition process may deposit more material on certain portions of the workpiece, such as near the center, due to the increased plasma density in this region. Forming a completely uniform plasma across a workpiece can be challenging.

[0018] In some embodiments, workpiece uniformity may be improved by performing selective treatments. For example, it may be desirable to form a workpiece with a thickness that is constant across the workpiece within a predetermined tolerance. To accomplish this, a workpiece having a known thickness profile may undergo a selective etch process to remove material from the workpiece until the thickness across the workpiece is within predetermined tolerances. In other embodiments, workpiece uniformity may be improve...

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Abstract

The present invention discloses a method for processing a workpiece. By measuring the amount of material that the ion beam removes from or adds to the workpiece as a function of beam position, the actual rate at which different portions of the ion beam can process the workpiece is determined, referred to as the processing rate profile. Determine the initial thickness profile of the workpiece to be processed. A first set of processing parameters is determined based on the initial thickness profile, the target thickness profile, and the processing rate profile of the ion beam. The artifact is then processed using this first set of processing parameters. In some embodiments, an updated thickness profile is determined after the first processing, and a second set of processing parameters is determined. A second process is performed using a second set of process parameters. Optimizations to improve throughput are also disclosed. The present invention enables improved processing of workpieces by measuring the actual processing rate profile of the ion beam as a function of beam position.

Description

technical field [0001] Embodiments of the invention relate to a method of selectively processing a workpiece, and more particularly, to selectively performing etching, deposition, or amorphization processes on a semiconductor workpiece. Background technique [0002] Improving semiconductor device yield is an ongoing goal. One area that could be improved is uniformity control across the workpiece. In some processes, a workpiece may receive more processing in one zone (eg, near the center of the workpiece) than in other zones. [0003] For example, a deposition process may deposit more material near the center of the workpiece than near the outer edges of the workpiece. This can be attributed to the increased plasma density near the center of the deposition chamber. [0004] In another example, the spin coating process may leave more material near the outer edges of the workpiece than the center of the workpiece. This can be attributed to the centrifugal force that pushes ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/3065H01L21/66
CPCH01J2237/30433H01J2237/31H01L22/12H01L22/20H01L21/265H01L21/3065H01L21/28506H01J2237/3151H01J2237/30472
Inventor 摩根·D·艾文斯凯文·安葛林萝丝·班迪
Owner VARIAN SEMICON EQUIP ASSOC INC
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