Conductive phase material for thick film resistance paste
A technology of thick film resistors and conductive phases, applied in the manufacture of thick film resistors, resistors, cables/conductors, etc., can solve problems such as difficult to adjust the resistance value/TCR, resistance paste difficult to achieve resistance value/TCR controllable, etc. , to achieve the effect of reducing temperature sensitivity and size effect, and improving electrostatic discharge performance
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Embodiment 1
[0024] An embodiment of the conductive phase material for the thick film resistance paste of the present invention, the conductive phase material of the thick film resistance paste comprises the following components in weight percentage: 95% lead ruthenate and 5% ruthenium dioxide %;
[0025] Wherein, lead ruthenate is the mixture of lead ruthenate A and lead ruthenate B; The average specific surface area of lead ruthenate A is 10m 2 / g, the average particle diameter is 30nm; the average specific surface area of the described lead ruthenate B is 25m 2 / g, the average particle diameter is 10nm; the weight ratio of lead ruthenate A and lead ruthenate B is: lead ruthenate A: lead ruthenate B=1:2; The average specific surface area of ruthenium dioxide is 58m 2 / g.
[0026] A thick film resistor paste containing the conductive phase material for the thick film resistor paste described in this embodiment, comprising the following components in weight percentage: 25% conducti...
Embodiment 2
[0033] An embodiment of the conductive phase material for the thick film resistance paste of the present invention, the conductive phase material of the thick film resistance paste comprises the following components in weight percentage: 95% lead ruthenate and 5% ruthenium dioxide %;
[0034] Wherein, lead ruthenate is the mixture of lead ruthenate A and lead ruthenate B; The average specific surface area of lead ruthenate A is 3m 2 / g, the average particle diameter is 95nm; the average specific surface area of described lead ruthenate B is 8m 2 / g, the average particle diameter is 53nm; the weight ratio of lead ruthenate A and lead ruthenate B is: lead ruthenate A: lead ruthenate B=1:10; The average specific surface area of ruthenium dioxide is 58m 2 / g. A thick film resistor paste containing the conductive phase material for the thick film resistor paste described in this embodiment, the content of the conductive phase of the thick film resistor paste, the type and co...
Embodiment 3
[0036] An embodiment of the conductive phase material for the thick film resistance paste of the present invention, the conductive phase material of the thick film resistance paste comprises the following components in weight percentage: 95% lead ruthenate and 5% ruthenium dioxide %;
[0037] Wherein, lead ruthenate is the mixture of lead ruthenate A and lead ruthenate C; The average specific surface area of lead ruthenate A is 5m 2 / g, the average particle diameter is 68nm; the average specific surface area of described lead ruthenate C is 76m 2 / g, the average particle diameter is 4nm; the weight ratio of lead ruthenate A and lead ruthenate C is: lead ruthenate A: lead ruthenate C=1:3; The average specific surface area of ruthenium dioxide is 58m 2 / g.
[0038] A thick film resistor paste containing the conductive phase material for the thick film resistor paste described in this embodiment, the content of the conductive phase of the thick film resistor paste, the ty...
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Abstract
Description
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Application Information
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