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Conductive phase material for thick film resistance paste

A technology of thick film resistors and conductive phases, applied in the manufacture of thick film resistors, resistors, cables/conductors, etc., can solve problems such as difficult to adjust the resistance value/TCR, resistance paste difficult to achieve resistance value/TCR controllable, etc. , to achieve the effect of reducing temperature sensitivity and size effect, and improving electrostatic discharge performance

Active Publication Date: 2019-06-07
CHAOZHOU THREE CIRCLE GRP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the adjustment of the resistance value / TCR by mixed ruthenium dioxide is only applicable to the slurry with a low resistance value (100Ω~1kΩ), and it is difficult to achieve the resistance value for the resistance slurry with a high resistance value (≥1kΩ). Value / TCR controllable purpose
This is because for medium and high resistance slurry (≥1kΩ), the main component of the conductive phase is lead ruthenate, and the content of ruthenium dioxide is less (or not contained), so the mixed RuO 2 Difficult to use for the purpose of adjusting resistance / TCR

Method used

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  • Conductive phase material for thick film resistance paste
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  • Conductive phase material for thick film resistance paste

Examples

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Embodiment 1

[0024] An embodiment of the conductive phase material for the thick film resistance paste of the present invention, the conductive phase material of the thick film resistance paste comprises the following components in weight percentage: 95% lead ruthenate and 5% ruthenium dioxide %;

[0025] Wherein, lead ruthenate is the mixture of lead ruthenate A and lead ruthenate B; The average specific surface area of ​​lead ruthenate A is 10m 2 / g, the average particle diameter is 30nm; the average specific surface area of ​​the described lead ruthenate B is 25m 2 / g, the average particle diameter is 10nm; the weight ratio of lead ruthenate A and lead ruthenate B is: lead ruthenate A: lead ruthenate B=1:2; The average specific surface area of ​​ruthenium dioxide is 58m 2 / g.

[0026] A thick film resistor paste containing the conductive phase material for the thick film resistor paste described in this embodiment, comprising the following components in weight percentage: 25% conducti...

Embodiment 2

[0033] An embodiment of the conductive phase material for the thick film resistance paste of the present invention, the conductive phase material of the thick film resistance paste comprises the following components in weight percentage: 95% lead ruthenate and 5% ruthenium dioxide %;

[0034] Wherein, lead ruthenate is the mixture of lead ruthenate A and lead ruthenate B; The average specific surface area of ​​lead ruthenate A is 3m 2 / g, the average particle diameter is 95nm; the average specific surface area of ​​described lead ruthenate B is 8m 2 / g, the average particle diameter is 53nm; the weight ratio of lead ruthenate A and lead ruthenate B is: lead ruthenate A: lead ruthenate B=1:10; The average specific surface area of ​​ruthenium dioxide is 58m 2 / g. A thick film resistor paste containing the conductive phase material for the thick film resistor paste described in this embodiment, the content of the conductive phase of the thick film resistor paste, the type and co...

Embodiment 3

[0036] An embodiment of the conductive phase material for the thick film resistance paste of the present invention, the conductive phase material of the thick film resistance paste comprises the following components in weight percentage: 95% lead ruthenate and 5% ruthenium dioxide %;

[0037] Wherein, lead ruthenate is the mixture of lead ruthenate A and lead ruthenate C; The average specific surface area of ​​lead ruthenate A is 5m 2 / g, the average particle diameter is 68nm; the average specific surface area of ​​described lead ruthenate C is 76m 2 / g, the average particle diameter is 4nm; the weight ratio of lead ruthenate A and lead ruthenate C is: lead ruthenate A: lead ruthenate C=1:3; The average specific surface area of ​​ruthenium dioxide is 58m 2 / g.

[0038] A thick film resistor paste containing the conductive phase material for the thick film resistor paste described in this embodiment, the content of the conductive phase of the thick film resistor paste, the ty...

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Abstract

The invention discloses a conductive phase material for a thick-film resistance slurry. The conductive phase material comprises lead ruthenate containing at least two of lead ruthenate A, lead ruthenate B, and lead ruthenate C; the average specific surface area of the lead ruthenate A is 3 to 10m<2> / g and the average particle size is 30 to 100nm; the average specific surface area of the lead ruthenate B is 8 to 26m<2> / g and the average particle size is 10 to 60nm; and the average specific surface area of the lead ruthenate C is 30 to 80m<2> / g and the average particle size is 3 to 40nm. In addition, the invention also discloses a thick-film resistance slurry. According to the conductive phase material provided by the invention, the resistance / TCR is adjusted by mixing of lead ruthenate withdifferent specific surface areas and different particle sizes, so that the electrostatic discharge performance is improved, the thermosensitivity is reduced, and the dimension effect is reduced. Theconductive phase material is suitable for resistors with high and intermediate resistance values.

Description

technical field [0001] The invention relates to a thick film resistance paste, in particular to a conductive phase material for the thick film resistance paste. Background technique [0002] Thick-film resistor paste is mainly composed of conductive phase, glass and organic phase. The conductive phase is an important part that determines the resistance performance of the resistor paste. Its main function is to conduct current, which has a direct impact on the electrical performance parameters and stability of the prepared resistor. influences. [0003] Mixed ruthenium dioxide (RuO 2 ) can regulate the resistance / TCR. However, the adjustment of the resistance value / TCR by mixed ruthenium dioxide is only applicable to the slurry with a low resistance value (100Ω~1kΩ), and it is difficult to achieve the resistance value for the resistance slurry with a high resistance value (≥1kΩ). Value / TCR controllable purpose. This is because for medium and high resistance slurry (≥1kΩ),...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01B1/08H01B13/00H01C7/00
CPCH01B1/08H01B13/00H01C7/003
Inventor 邱基华
Owner CHAOZHOU THREE CIRCLE GRP