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Power device for achieving dual-side heat dissipation and pressure equalization

A power device, double-sided heat dissipation technology, applied in the direction of electric solid-state devices, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problems of poor heat dissipation performance, low reliability of power device packaging structure, etc., to achieve double-sided The effect of heat dissipation

Active Publication Date: 2018-03-06
NORTH CHINA ELECTRIC POWER UNIV (BAODING) +1
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a power device that realizes double-sided heat dissipation and pressure equalization, which can solve the problem of low reliability of the power device packaging structure due to poor heat dissipation performance and uneven pressure on the chip inside the power device. question

Method used

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  • Power device for achieving dual-side heat dissipation and pressure equalization
  • Power device for achieving dual-side heat dissipation and pressure equalization
  • Power device for achieving dual-side heat dissipation and pressure equalization

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Embodiment Construction

[0031] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0032] The purpose of the present invention is to provide a power device that realizes double-sided heat dissipation and pressure equalization, which can solve the problem of low reliability of the power device packaging structure due to poor heat dissipation performance and uneven pressure on the chip inside the power device. question.

[0033] In order to make the above objects, features and advantages of the present invention more comprehensible, the presen...

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Abstract

The invention discloses a power device for achieving dual-side heat dissipation and pressure equalization. By arranging a conductive contact sheet provided with a plurality of concave pool structures,the power device is divided into two parts to achieve dual-side heat dissipation; and by mechanical connection of spring pieces and concave parts of the concave pool structures, the concave part of each concave pool structure is sequentially connected with an upper molybdenum sheet, a chip, a lower molybdenum sheet, a silver cushion, a boss and a conductive substrate from top to bottom, so that each spring piece and each chip are independent to each other, the stress of the chip can be reduced through generating upward displacement by the corresponding spring piece when thermal stress appliedto one of the chips due to difference of structure or thermal expansion becomes larger, the other chips and other springs are not affected, and the stress balancing degree of the chip is improved. With the power device provided by the invention, the problem of low reliability of a power device package structure caused by poor heat dissipation performance and non-uniform bearing stress to an internal chip of a traditional power device package structure can be solved.

Description

technical field [0001] The invention relates to the field of power device packaging, in particular to a power device that realizes double-sided heat dissipation and pressure equalization. Background technique [0002] Modern power electronic devices have the advantages of high power, simple driving and high switching frequency. Electronic components with large output power are called power devices, including: high-power transistors, thyristors, bidirectional thyristors, GTOs, MOSFETs, IGBTs, etc. For example, the power device insulated gate bipolar transistor is a gate voltage drive device, which has the advantages of high operating frequency, high power density, high reliability, and easy series connection. It has been widely used in high-power occasions. [0003] In the prior art, power devices generally adopt a module structure. Taking the power device IGBT as an example, one IGBT power device includes several IGBT chips. The initial packaging form of IGBT is welding ty...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/367H01L23/492H01L23/00H01L25/07
CPCH01L23/3672H01L23/3677H01L23/4922H01L23/562H01L25/072
Inventor 赵志斌范思远倪筹帷崔翔
Owner NORTH CHINA ELECTRIC POWER UNIV (BAODING)
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