Control method and device for narrow pulse filter, storage device and narrow pulse filtering equipment

Abstract

The invention discloses a control method and device for narrow pulse filter, a storage device and narrow pulse filtering equipment. The method comprises the following steps: receiving a pulse signal used for driving a switching tube of a switching circuit; detecting the level state of the received pulse signal; when detecting that the level of the received pulse signal is a high level or a low level, outputting the corresponding high level or low level to the switching tube; when detecting that the level of the received pulse signal goes into the state of a rising edge, pausing to detect the level state and starting to time, and when a timing value is within a first pulse width limit threshold, outputting the low level to the switching tube; and when detecting that the level of the received pulse signal goes into the state of a falling edge, pausing to detect the level state and starting to time, and when the timing value is within a second pulse width limit threshold, outputting the high level to the switching tube. The control method for the narrow pulse filter provided by the embodiment of the invention reduces the dissipation power of the switching tube, improves the overall working efficiency of a circuit, and adjusts the output pulse width.

Description

technical field [0001] The invention relates to the field of computer technology, in particular to a control method and device for narrow pulse filtering, storage equipment and narrow pulse filtering equipment. Background technique [0002] For an ideal PWM (Pulse Width Modulation, pulse width modulation) signal, such as figure 1 The duty cycle D shown is Ton / T, that is, the ratio of the conduction time to the entire PWM waveform period. And the actual PWM signal waveform is as figure 1 As shown, there are rising and falling edges during the turn-on period. [0003] For the switching tube of the switching tube driving circuit, the switching tube is a semiconductor device, usually including a triode, a field effect tube, an IGBT tube, a GTO, a GTR, etc., and the dissipation power of the switching tube is P=U*I, and U is the power at both ends of the switching tube. Voltage, I is the current flowing through the switch tube. When the switch tube is cut off, I is about zero,...

AI Technical Summary

Problems solved by technology

Since the PWM signal controlling the switching tube has a narrow pulse, the duty ratio of the narrow pulse is relatively small, and since the switching tube is in a linear state when the PWM signal is on the rising edge and falling edge, the time for the switching tube to be in the linear region at this time takes up The proportion of the total on-time of the switch tube is relatively high, and because the power dissipation P of the switch tube is large when it is in a linear state, and the temperature of the switch tube is high, the total dissipation of the switch tube will be further increased when the number of narrow pulses is large. power, which reduces the working efficiency of the overall circuit, and if the temperature of the switch tube exceeds the rated value, the switch tube may be damaged

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