Graphene pellicle for extreme ultraviolet lithography

Abstract

The invention discloses a graphene layer formation method. The graphene layer formation method comprises steps of depositing a first material layer over a first substrate and depositing a graphene layer over the first material layer. The method further includes steps of depositing an amorphous silicon layer over the graphene layer and bonding the amorphous silicon layer to a second substrate, thereby forming an assembly. The geaphene layer formation method further includes asteps of annealing the assembly, thereby converting the amorphous silicon layer to a silicon oxide layer. The method further includes steps of removing the first substrate from the assembly and removing the first material layer from the assembly, thereby exposing the graphene layer.

Description

technical field [0001] Embodiments of the present invention relate to a method for forming a graphene layer. Background technique [0002] As the semiconductor industry has progressed to nanotechnology in pursuit of higher device density, higher performance, and lower cost, more stringent requirements have been placed on lithography tools used in semiconductor manufacturing. Technologies such as extreme ultraviolet (EUV) lithography have been utilized to support the critical dimension (CD) requirement of smaller integrated circuit (IC) devices. EUV lithography uses radiation in the EUV region with a wavelength of about 1 nm to 100 nm (eg, 13.5 nm), which is faster than that used in deep ultraviolet (DUV) lithography (eg, 193 nm lithography). The wavelength is much shorter. EUV lithography uses a mask (or reticle) that reflects EUV radiation from a radiation source toward a target, such as a silicon wafer, thereby transferring a pattern from the mask to the target. Any imp...

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Problems solved by technology

[0003] Unlike masks used in deep-UV lithography, which traditionally employ thin films to protect the mask surface, it is currently difficult to fabricate effective thin films for EUV masks on a large scale

One reason is that the wavelength of EUV radiation is very short and the membrane of a conventional film will absorb it so much that the membrane will deform from overheating after a few uses and will also substantially reduce the reach of the target. extreme ultraviolet energy

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