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Copper alloy for electronic material and preparation method of copper alloy

A technology of electronic materials and copper alloys, which is applied in the field of copper alloys to achieve the effect of improving strength and electrical conductivity

Inactive Publication Date: 2018-03-16
柳州智臻智能机械有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The inventor considers that the strength and electrical conductivity of the above-mentioned reported copper alloys need to be further improved

Method used

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preparation example Construction

[0021] Correspondingly, the present invention also provides a method for preparing a copper alloy for electronic materials described in the above technical solution, which includes the following steps: according to the composition of the copper alloy, using a high-frequency melting furnace to melt the alloy elements at 20°C / s Cast the alloy at a cooling rate of 800°C for hot forging with a deformation of 60%; heat the hot-forged copper alloy at 500°C for 3 hours, and then perform cold rolling with a deformation of 55%; at 380°C heat preservation at low temperature for 6 hours, and then carry out cold rolling with a deformation amount of 60%; heat preservation at 200° C. for 4 hours to perform stress relief annealing to obtain a copper alloy for electronic materials.

[0022] As can be seen from the above scheme, the present invention takes Ni, Cr, Mo, Ti, W, B, Ag, Sm, Gd and Cu as main components, and each component interacts and affects each other, which improves the copper a...

Embodiment 1

[0026] The composition of copper alloys for electronic materials is as follows:

[0027] Ni 0.5wt%, Cr 0.09wt%, Mo 0.04wt%, Ti 0.7wt%, W 0.05wt%, B 0.03wt%, Ag 0.6wt%, Sm 0.01wt%, Gd 0.05wt%, the balance is Cu.

[0028] According to the composition of the copper alloy, use a high-frequency melting furnace to melt the alloy elements, cast the alloy at a cooling rate of 20°C / s, and perform hot forging at 800°C, with a deformation of 60%;

[0029] The hot-forged copper alloy is kept at 500°C for 3 hours, and then cold-rolled with a deformation of 55%;

[0030] Then heat preservation at 380°C for 6 hours, and then carry out cold rolling with a deformation of 60%;

[0031] Stress-relief annealing was carried out at 200° C. for 4 hours to obtain a copper alloy for electronic materials.

[0032] The properties of the copper alloy for electronic materials prepared in this embodiment were tested, and the tensile strength of the copper alloy was 860 MPa, and the electrical conductivit...

Embodiment 2

[0034] The composition of copper alloys for electronic materials is as follows:

[0035] Ni 0.9wt%, Cr 0.06wt%, Mo 0.08wt%, Ti 0.3wt%, W 0.1wt%, B 0.03wt%, Ag 0.2wt%, Sm 0.05wt%, Gd 0.01wt%, the balance is Cu.

[0036] According to the composition of the copper alloy, use a high-frequency melting furnace to melt the alloy elements, cast the alloy at a cooling rate of 20°C / s, and perform hot forging at 800°C, with a deformation of 60%;

[0037] The hot-forged copper alloy is kept at 500°C for 3 hours, and then cold-rolled with a deformation of 55%;

[0038] Then heat preservation at 380°C for 6 hours, and then carry out cold rolling with a deformation of 60%;

[0039] Stress-relief annealing was carried out at 200° C. for 4 hours to obtain a copper alloy for electronic materials.

[0040] The properties of the copper alloy for electronic materials prepared in this embodiment were tested, and the tensile strength of the copper alloy was 855 MPa, and the electrical conductivity...

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Abstract

The invention provides copper alloy for an electronic material and a preparation method of the copper alloy. The copper alloy for the electronic material is prepared from the following components by weight percent: 0.5 to 0.9 percent of Ni, 0.06 to 0.09 percent of Cr, 0.04 to 0.08 percent of Mo, 0.3 to 0.7 percent of Ti, 0.05 to 0.1 percent of W, 0.03 to 0.09 percent of B, 0.2 to 0.6 percent of Ag, 0.01 to 0.05 percent of Sm, 0.01 to 0.05 percent of Gd, and the balance of Cu. The copper alloy for the electronic material of the invention adopts Ni, Cr, Mo, Ti, W, B, Ag, Sm, Gd and Cu as main components, all components act upon each other and influence one another, so that the strength and the electric conductivity of the prepared copper alloy for the electronic material can be improved. Anexperimental result shows that the tensile strength of the copper alloy for the electronic material prepared by the invention is 860MPa, and the electric conductivity is 68 percent IACS.

Description

technical field [0001] The invention relates to the technical field of copper alloys, in particular to a copper alloy for electronic materials and a preparation method thereof. Background technique [0002] Electronic materials refer to materials used in electronic technology and microelectronic technology, including dielectric materials, semiconductor materials, piezoelectric and ferroelectric materials, conductive metals and their alloy materials, magnetic materials, optoelectronic materials and other related materials. Electronic materials are the material basis for the development of modern electronics industry and science and technology, and are also technology-intensive subjects in the field of science and technology. [0003] Copper alloys for electronic materials that are used for lead frames, terminals, connectors, etc. with balanced performance are required to have both high strength and excellent electrical or thermal conductivity as the basic performance of the p...

Claims

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Application Information

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IPC IPC(8): C22C9/00C22C9/06C22F1/08
CPCC22C9/00C22C9/06C22F1/08
Inventor 梁宁莫原
Owner 柳州智臻智能机械有限公司
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