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Preparation of cspbbr by a laser sputtering method 3 thin film method

A laser sputtering and thin film technology, which is used in sputtering coating, metal material coating process, vacuum evaporation coating and other directions, can solve the problem of wasting raw materials, unable to control the film thickness conveniently and accurately, and is not suitable for large-area thin film preparation industry. Production and practical application issues, to achieve the effect of reducing waste, easy preparation, and high purity

Active Publication Date: 2019-07-12
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Current general CsPbBr 3 Thin film preparation methods are mainly solution spin coating method and chemical vapor deposition method, etc., but these preparation methods cannot conveniently and accurately control the film thickness, a lot of raw materials are wasted in the preparation process, and most of them are not suitable for the preparation of large-area thin films for industrial production and practical application

Method used

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  • Preparation of cspbbr by a laser sputtering method <sub>3</sub> thin film method
  • Preparation of cspbbr by a laser sputtering method <sub>3</sub> thin film method
  • Preparation of cspbbr by a laser sputtering method <sub>3</sub> thin film method

Examples

Experimental program
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Embodiment 1

[0024] PbBr 2 Put CsBr and CsBr into 60ml of DMSO solution at a molar ratio of 2:1 and heat at 70°C with magnetic stirring to dissolve. Pour the mixed solution of DMF and cyclohexanol into it, raise the temperature to 110°C at a rate of 1°C / min and keep it warm for 10 hours, take out the red precipitated solid and put it in a DMF solution at 100°C for cleaning, then take it out and put it in an oven for 60 ℃ drying. Then collect the sufficient powder after drying and put it into the mold and press it with a tablet machine to make CsPbBr 3 target. The cleaned glass substrate and the prepared CsPbBr 3 Put the target into the cavity together, and vacuum the cavity to 7×10 -3 Pa, heat the substrate to 110°C, and adjust the laser energy of the incident cavity to 100mJ, select the laser frequency as 5Hz and the number of pulses as 1500. After the deposition of 1500 pulses, the substrate continues to be annealed for 10min, and then taken out, CsPbBr 3 Film preparation is complet...

Embodiment 2

[0026] PbBr 2 Put CsBr and CsBr into 65ml DMSO solution according to the molar ratio of 2.1:0.9 and heat at 70°C with magnetic stirring to dissolve. Pour the mixed solution of DMF and cyclohexanol into it, raise the temperature to 110°C at a rate of 1°C / min and keep it warm for 10 hours, take out the red precipitated solid and put it in a DMF solution at 100°C for cleaning, then take it out and put it in an oven for 60 ℃ drying. Then collect the sufficient powder after drying and put it into the mold and press it with a tablet machine to make CsPbBr 3 target. The cleaned glass substrate and the prepared CsPbBr 3 Put the target into the cavity together, and pump the vacuum in the cavity to 1×10 -3 Pa, heat the substrate to 150°C, adjust the laser energy incident into the cavity to 160mJ, select the laser frequency as 5Hz and the number of pulses as 1000. After the deposition of 1000 pulses is completed, the substrate continues to be annealed for 20min, and then taken out, C...

Embodiment 3

[0028] PbBr 2 Put CsBr and CsBr into 55ml of DMSO solution according to the molar ratio of 1.6:1.3 and heat at 70°C with magnetic stirring to dissolve. Pour the mixed solution of DMF and cyclohexanol into it, raise the temperature to 110°C at a rate of 1°C / min and keep it warm for 10 hours, take out the red precipitated solid and put it in a DMF solution at 100°C for cleaning, then take it out and put it in an oven for 60 ℃ drying. Then collect the sufficient powder after drying and put it into the mold and press it with a tablet machine to make CsPbBr 3 target. The cleaned glass substrate and the prepared CsPbBr 3 Put the target into the cavity together, and vacuum the cavity to 6×10 -4 Pa, heat the substrate to 230°C, adjust the laser energy incident into the cavity to 230mJ, select the laser frequency as 5Hz and the number of pulses as 2000. After the deposition of 2000 pulses, the substrate continues to be annealed for 30min, and then taken out, CsPbBr 3 Film preparat...

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Abstract

The invention discloses a method for preparing a CsPbBr3 film through a laser sputtering method. The method comprises the specific steps that firstly, sufficient CsPbBr3 single crystals are prepared from materials of DMF, DMSO, cyclohexanol, PbBr2 and CsBr through a solution heating method and pressed into a target material; and then the pulse laser deposition film preparation technology is adopted, specifically, laser energy and the temperature of a substrate are adjusted, the thickness of the film is controlled through the number of laser pulses, and the CsPbBr3 film is prepared in a vacuumdeposition mode. The CsPbBr3 film is prepared through the pulse laser deposition technology, the uniform and large-area film can be prepared conveniently and rapidly, the thickness of the film is easyto control effectively, the materials are saved, and industrial production and application of the CsPbBr3 film in solar cells are facilitated.

Description

technical field [0001] The present invention is CsPbBr 3 A method for preparing thin films, especially an inorganic perovskite CsPbBr using a pulsed laser deposition method 3 The thin film method belongs to the technical field of thin film preparation. Background technique [0002] Inorganic perovskite crystal form (ABX 3 ) light-absorbing material, the ABX 3 In the structure, A is the metal cesium ion (Cs + ), B is metal lead ion (Pb 2+ ), X is a halide bromide ion (Br - ). This material is widely used in solar cells and fluorescent materials. Current general CsPbBr 3 Thin film preparation methods are mainly solution spin coating method and chemical vapor deposition method, etc., but these preparation methods cannot conveniently and accurately control the film thickness, a lot of raw materials are wasted in the preparation process, and most of them are not suitable for the preparation of large-area thin films for industrial production and practical application. C...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/06C23C14/34C23C14/58
CPCC23C14/0694C23C14/3435C23C14/3485C23C14/5806
Inventor 徐庆宇张昊马眉扬王宏董帅
Owner SOUTHEAST UNIV