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Novel passive resonator of using solenoid through-silicon-via inductor

A technology of passive resonators and through-silicon vias, which is applied in the direction of resonators, waveguide devices, circuits, etc., can solve the problem that the area occupied by the resonator and the packaging cost cannot meet the demand, so as to improve various performances and reduce the physical size , the effect of short interconnect length

Inactive Publication Date: 2018-03-20
HANGZHOU DIANZI UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

With the continuous shrinking of integrated devices, traditional resonators can no longer meet the demand in terms of occupied area and packaging cost

Method used

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  • Novel passive resonator of using solenoid through-silicon-via inductor
  • Novel passive resonator of using solenoid through-silicon-via inductor
  • Novel passive resonator of using solenoid through-silicon-via inductor

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Embodiment Construction

[0026] The present invention will be further described below in conjunction with accompanying drawing.

[0027] The passive resonator of the present invention is composed of multiple element units, and the input and output ports are located in the re-layout layer on top of the substrate.

[0028] The element unit includes a solenoid type TSV inductor 600 , a coaxial TSV capacitor 700 , a first connecting substrate assembly 800 and a second connecting substrate assembly 900 . The solenoidal TSV inductor 600 includes a substrate top reconfiguration layer 300 , two columns of TSV arrays 400 and a substrate bottom reconfiguration layer 500 .

[0029] The top re-layout layer of the solenoidal TSV inductor substrate includes first to fourth substrates 301-304, which are in the same plane and not connected to each other; the second substrate 302 and the third substrate 303 are parallel to each other. The reconstruction layer 500 at the bottom of the base includes first to third subs...

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PUM

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Abstract

The invention discloses a novel passive resonator of using a solenoid through-silicon-via inductor. According to the novel passive resonator, a signal is input through an input port; and one part of current flows into a coaxial through-silicon-via and enters a current return path, and the other part of current flows into an annular through-silicon-via array, flows into the current return path andfinally flows outside through an output port. By using a passive RC resonator component formed by a coaxial through-silicon-via capacitor and the solenoid through-silicon-via inductor, the physical dimension of the component is reduced. By using the coaxial through-silicon-via as the capacitor, the capacitor has smaller interconnection length than a traditional two-dimensional capacitor, so that the delay time is shortened and the conductor loss is reduced. In addition, through use of the solenoid through-silicon-via inductor, the physical dimension of the resonator is greatly reduced and various properties of the resonator are greatly improved.

Description

technical field [0001] The invention belongs to the technical field of passive electronic devices, and relates to a microwave resonator element, in particular to a passive resonator structure using through-silicon holes. Background technique [0002] With the rapid development of modern communication technology, the special requirements for the use of communication equipment make people have higher and higher requirements for the weight and size of communication equipment, especially the miniaturization, portability and low power consumption of resonators in mobile communication systems requirements are getting stronger. With the continuous shrinking of integrated devices, traditional resonators can no longer meet the demand in terms of occupied area and packaging cost. [0003] In recent years, with the rapid development of three-dimensional integrated circuits, a new integrated circuit manufacturing process, through-silicon via technology, has received extensive attention...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01P7/00
CPCH01P7/005
Inventor 赵文生泮金炜徐魁文赵鹏王高峰董林玺
Owner HANGZHOU DIANZI UNIV
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