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An etching method for forming contact holes with different depths

A technology of contact hole and depth, which is applied in the manufacture of electrical components, circuits, semiconductors/solid-state devices, etc., and can solve problems such as device failure and damage to metal-semiconductor contacts

Active Publication Date: 2020-01-21
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the difference in the amount of overetching increases to a certain extent, under the condition that the contact hole with a larger depth is guaranteed not to be disconnected, the overetch amount withstood by a contact hole with a shallower depth may make the metal silicide Engraving, destroying the metal-semiconductor contact, making the device invalid

Method used

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  • An etching method for forming contact holes with different depths
  • An etching method for forming contact holes with different depths
  • An etching method for forming contact holes with different depths

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Embodiment Construction

[0026] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0027] It should be noted that, in the case of no conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other.

[0028] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments, but not as a limitation of the present invention.

[0029] In a preferred embodiment, an etching method for forming contact holes with different depths is proposed,...

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Abstract

The invention relates to an etching method for forming contact holes with different depths. According to the etching method of the invention, backfilling is performed on partially etched contact holestructures; with ion implantation photomasks at contact hole portions with larger depths adopted, secondary photo-etching is performed, and etching is performed by a certain depth, and thereafter, etching is performed. With the method adopted, the problem of contact hole failure caused by excessively large etching quantity of contact holes with small depths under the condition of simultaneous etching of contact holes with different depths can be solved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an etching method for forming contact holes with different depths. Background technique [0002] The contact hole is the key to realize the voltage input and output of the transistor. Whether the resistance value of the contact hole and the connection state are normal determine whether the device can realize its due function. [0003] As the integration of semiconductor devices increases, the device structure becomes more and more complex. The use of multi-layer gates and field effect transistors with different functions makes a variety of contact hole structures appear in the period structure, and these parts that need contact hole connection There is often a certain height difference. When the height difference increases to a certain extent, there are obvious differences in the amount of overetching of contact holes with different depths. When the difference in the amo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/311H01L21/768
CPCH01L21/31144H01L21/768
Inventor 韩朋刚习艳军贺可强杨渝书
Owner SHANGHAI HUALI MICROELECTRONICS CORP