Mask, memory and manufacturing method of memory

A manufacturing method and mask technology, which is applied in the field of memory and memory manufacturing and mask, can solve the problems of difficult registration of mask and lower memory quality, etc., so as to improve registration accuracy, improve quality and reliability Effect

Pending Publication Date: 2018-04-03
CHANGXIN MEMORY TECH INC
View PDF0 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The object of the present invention is to provide a mask, a memory and a method for manufacturing the memory, so as to solve

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Mask, memory and manufacturing method of memory
  • Mask, memory and manufacturing method of memory
  • Mask, memory and manufacturing method of memory

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0104] First, please refer to figure 1 , which is a schematic structural diagram of a mask for forming a contact between storage nodes in a memory. like figure 1 As shown, the mask 100 includes: a substrate 110, the substrate 110 has a plurality of storage node contact patterns 120, and the storage node contact patterns 120 are circular.

[0105] Next, please refer to Figure 2 to Figure 8 ,in, figure 2 is to adopt figure 1 The schematic top view of the memory after the reticle forms the storage node contact as shown; image 3 Yes figure 2 A schematic top view of the substrate in the memory shown; Figure 4 Yes figure 2 A schematic cross-sectional view of the substrate along AA' in the memory shown; Figure 5 is in Figure 4 The schematic diagram of the structure after forming the connection material layer on the structure shown; Image 6 is in Figure 5 The schematic diagram of the structure after the first photoresist layer is formed on the structure shown; F...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a mask, a memory and a manufacturing method of the memory. The mask comprises first linear patterns extending along a first direction and second linear patterns extending alonga second direction, so that registration can be carried out in the first direction and the second direction during registration between the masks, thereby improving the registration accuracy. Furthermore, the masks can be used for forming memory node contacts and capacitors, that is to say, two connected structures can be manufactured by using the masks with the same patterns during manufacturingof the memory, so that the registration accuracy of the masks in front and back two steps can be further improved, thereby improving the quality and the reliability of the formed memory.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a mask plate, a memory and a method for manufacturing the memory. Background technique [0002] In the field of semiconductor manufacturing, photolithography is used to transfer a pattern from a mask to a substrate. A mask, also called a photolithography plate, mask plate, or reticle, is a For the flat plate with light transmission for exposure light, there is a design pattern with light shielding for exposure light on it, which can selectively block the light irradiated on the photoresist layer or mask layer on the surface of the substrate, and finally on the substrate Corresponding patterns are formed on the photoresist layer or the mask layer on the bottom surface. [0003] Memory manufacturing is a very important piece of the field of semiconductor manufacturing. A memory generally includes a capacitor and a transistor, wherein the capacitor is used to s...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G03F1/42H01L27/108
CPCG03F1/42H10B12/01H10B12/00
Inventor 不公告发明人
Owner CHANGXIN MEMORY TECH INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products