Cu2-xS/g-C3N4 heterojunction photocatalyst and preparation method thereof

A photocatalyst and heterojunction technology, applied in the field of photocatalytic materials, can solve the problems of harsh process conditions, complex preparation process, difficult operation, etc., and achieve the effects of no environmental pollution, simple preparation method, and easy availability of raw materials.

Inactive Publication Date: 2018-04-13
JIANGSU UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In order to solve the problems of complex preparation process, long process, impregnation and high-temperature treatment in the coupling system materials in the prior art, which lead to harsh process conditions and difficult operation, the present invention provides a method to directly obtain Cu by one-step calcination method. 2-x S / g-C 3 N 4 heterostructure approach

Method used

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  • Cu2-xS/g-C3N4 heterojunction photocatalyst and preparation method thereof
  • Cu2-xS/g-C3N4 heterojunction photocatalyst and preparation method thereof
  • Cu2-xS/g-C3N4 heterojunction photocatalyst and preparation method thereof

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Embodiment 1

[0021] Mix 5g of thiourea and 1g of copper nitrate uniformly, then place the mixture in a tube furnace, and calcinate at 400°C for 8h under the protection of nitrogen, wash and dry the reacted product with distilled water and absolute ethanol to obtain Cu 2-x S / g-C 3 N 4 heterojunction photocatalysts.

Embodiment 2

[0023] Mix 8g of thiourea and 4g of copper nitrate evenly, then place the mixture in a tube furnace, and calcinate at 500°C for 3h under nitrogen protection, wash and dry the reacted product with distilled water and absolute ethanol to obtain Cu 2-x S / g-C 3 N 4 heterojunction photocatalysts.

Embodiment 3

[0025] Mix 8g of thiourea and 6g of copper nitrate evenly, then place the mixture in a tube furnace, and calcinate at 550°C for 4h under nitrogen protection, wash and dry the reacted product with distilled water and absolute ethanol to obtain Cu 2-x S / g-C 3 N 4 heterojunction photocatalysts.

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Abstract

The invention discloses a preparation method of a Cu2-xS / g-C3N4 heterojunction photocatalyst. The method directly obtains a Cu2-xS / g-C3N4 heterostructure by a one-step calcination method, and comprises the following specific steps: mixing thiourea and copper nitrate to form a precursor mixture, calcining the mixture in a tubular furnace, washing the obtained product with distilled water and anhydrous ethanol, and drying the product to obtain the Cu2-xS / g-C3N4 heterojunction photocatalyst. Thiourea is used as both a precursor of g-C3N4 and an S source of Cu2-xS. The obtained Cu2-xS / g-C3N4 heterostructure can significantly inhibit the recombination of photo-generated electrons and holes. The preparation method provided by the invention has the advantages of easily-available raw materials, low cost, mild reaction condition and no pollution to the environment, and has a good application prospect.

Description

technical field [0001] The invention belongs to the field of photocatalytic materials, in particular to a Cu 2-x S / g-C 3 N 4 Heterojunction photocatalyst and preparation method thereof. Background technique [0002] In recent decades, photocatalytic technology based on semiconductor materials has developed rapidly, and as an emerging and green technology, it has great potential in solving energy and environmental problems. Among many semiconductor materials, graphitic carbon nitride (g-C 3 N 4 ) as a completely non-metallic semiconductor has the advantages of stable chemical properties, narrow bandgap, and strong compatibility, making it a photocatalyst with great research value and application prospects. However, simple g-C 3 N 4 Photogenerated electrons and holes are easily recombined in the photocatalytic reaction, resulting in low photon quantum efficiency and inhibited photocatalytic activity. [0003] Cu 2-x S is an important p-type semiconductor, where the va...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J27/24
CPCB01J27/24B01J35/004
Inventor 马帅帅许澎瞿珍秀叶招莲傅小飞
Owner JIANGSU UNIV OF TECH
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