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Method for measuring stray light of 193nm photo-etching system based on CCD energy center integral method

A measurement method and technology of a lithography system, applied in the field of stray light measurement of 193nm lithography system, can solve the problems of affecting the resolution of lithography, affecting the contrast of lithography imaging, etc., and achieve the effect of low cost and high measurement cost

Active Publication Date: 2018-04-13
SICHUAN UNIV
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Problems solved by technology

Stray light will affect the contrast of lithography imaging and then affect the resolution of lithography

Method used

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  • Method for measuring stray light of 193nm photo-etching system based on CCD energy center integral method
  • Method for measuring stray light of 193nm photo-etching system based on CCD energy center integral method
  • Method for measuring stray light of 193nm photo-etching system based on CCD energy center integral method

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Embodiment Construction

[0026] A typical embodiment of a method for measuring stray light in a 193nm photolithography system based on the CCD energy center of gravity integration method of the present invention will be described in detail below, and the present invention will be further described in detail. It is necessary to point out that the following examples are only used for further description of the present invention, and cannot be interpreted as limiting the protection scope of the present invention, and those skilled in the art make some non-essential improvements to the present invention according to the above-mentioned content of the present invention And adjustments still belong to the protection scope of the present invention.

[0027] The invention proposes a method for measuring stray light of a 193nm photolithography system based on a CCD energy center of gravity integration method. The method is simple to operate, can realize fast and accurate measurement of the stray light of the li...

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Abstract

The invention provides a method for measuring stray light of a 193nm photo-etching system based on a CCD energy center integral method. The method is characterized in that a CCD is applied to replacestray light of an original photo-resist measurement illumination system, and comprises three steps of design of a stray light measurement system, description of a measurement principle and specific measurement. The method disclosed by the invention has the advantages of simple operation and higher measurement accuracy, and quick and accurate measurement of the stray light of an illumination systemcan be realized, so that real-time guidance can be provided for manufacturing and correcting of the illumination system.

Description

technical field [0001] The invention relates to the technical field of photolithography, in particular to a method for measuring stray light in a 193nm photolithography system based on a CCD energy center of gravity integration method. Background technique [0002] 193nm ArF projection lithography machine, as the mainstream lithography machine to achieve 90nm, 45nm and even 32nm nodes, is strongly sought after by major international semiconductor manufacturers and has broad development prospects. In a projection exposure lithography system, stray light is the scattered light that reaches the silicon wafer surface and deviates from the expected light path. Stray light will affect the contrast of lithography imaging and then affect the resolution of lithography. With the shortening of the light source wavelength of projection exposure lithography and the improvement of lithography resolution, stray light has a greater impact on lithography, especially on the current 193nm dee...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20G01J1/42
CPCG01J1/42G03F7/70591G03F7/7085
Inventor 曹益平
Owner SICHUAN UNIV
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