Insulated gate bipolar transistor and manufacturing method thereof, IPM module, and air conditioner

Abstract

The invention discloses an insulated gate bipolar transistor, an IPM module, an air conditioner and a manufacturing method of the insulated gate bipolar transistor. The insulated gate bipolar transistor comprises a semiconductor substrate, wherein the semiconductor substrate has a first surface and a second surface which are arranged relatively; and the insulated gate bipolar transistor also comprises a drift region and an active region formed on the first surface of the semiconductor substrate, and a collector region formed on the second surface of the semiconductor substrate; wherein the collector region comprises a first collector layer, a second collector layer, a third collector layer and a collector metal layer, which are sequentially connected to the drift region along the thicknessdirection of the semiconductor substrate; and the dosage concentration of the third collector layer is greater than the dosage concentration of the second collector layer, and is less than the dosageconcentration of the first collector layer. According to the invention, the conduction voltage drop and the off time of the insulated gate bipolar transistor are reduced at the same time under the circumstances that the dosage concentration is not increased and the lower conduction voltage drop of the insulated gate bipolar transistor is ensured through setting the dosage concentrations of the collector region uneven.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an insulated gate bipolar transistor and a manufacturing method thereof, an IPM module and an air conditioner. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT for short) is a composite fully-controlled voltage-driven power semiconductor device composed of a bipolar transistor (BJT) and an insulated gate field effect transistor (MOSFET), and has a MOSFET device Due to the advantages of high input impedance and low turn-on voltage drop of power transistors (giant transistors, referred to as GTRs), IGBTs are currently used as a new type of power electronic device because of the advantages of small drive power and reduced saturation voltage. applied to various fields. [0003] The carrier injection efficiency and extraction efficiency of the collector of the IGBT largely determine the conduction voltage drop and switching characteristics of the device. ...

AI Technical Summary

Problems solved by technology

In the prior art, the carrier injection efficiency is generally increased by increasing the doping concentration of the collection region of the IGBT, thereby reducing the turn-on voltage drop of the IGBT, but a higher collection region The doping concentration is not conducive to the extraction speed of carriers when the device is turned off, resulting in a longer turn-off time of the device

Similarly, if the doping concentration of the collector region of the IGBT is reduced, the turn-off time of the device will be reduced, but the turn-on voltage drop will increase

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