Driving system of GaN power device

Abstract

The invention relates to a driving system of a GaN power device, which mainly comprises a control circuit 1, a resonant circuit and a lossless buffer circuit 3, wherein the resonant circuit further comprises a turn-on resonant circuit 2 and a turn-off resonant circuit 4, and the driving circuit is enabled to have an ability of providing asymmetrical output through the upper and lower different charging and discharging circuits. The energy stored in a capacitor C is fed back to a power supply through an inductor L in the turn-off process of a switching tube by using a resonant principle, so that the energy is enabled to be effectively utilized. Meanwhile, the lossless buffer circuit is added to slow down the rising speed of voltage, so that the GaN power device is protected to a certain extent, and a problem of high loss of the GaN power device driving circuit is solved.

Description

technical field [0001] The invention relates to the application field of GaN power devices, in particular to a driving system of GaN power devices. Background technique [0002] Wide bandgap semiconductor GaN is an ideal material for third-generation power devices and is the main part of power converters, making power converters develop in the direction of high frequency, high power density and smaller volume. While having a faster switching speed, since the power loss increases proportionally to the frequency, at high frequencies, the power loss is the most important problem. When the switching frequency is high, the switching loss is the main factor of the power loss. When GaN MOSFETs are used at high frequencies, the traditional gate drive circuit cannot meet the requirements of low power consumption, and the power loss will increase proportionally to the frequency. The gate threshold voltage of the GaN MOSFET is very low, in the range of 1.4-1.7V, and it is easy to be f...

AI Technical Summary

Problems solved by technology

When GaN MOSFET is applied to high frequency, the traditional gate drive circuit cannot meet the requirements of low power consumption, and the power loss will increase proportionally to the frequency

The gate threshold voltage of GaN MOSFET is very low, in the range of 1.4-1.7V, it is easy to be falsely turned on by the oscillation spike generated by the parasitic inductance in the circuit

[0003] In order to adapt to future development needs, the converter must improve efficiency and power density to meet the characteristics of low loss, but the current power loss of the GaN drive circuit is still relatively high, so the present invention proposes a low-power GaN power device. Drive System

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