High-speed and high-precision characterization of vtsat and vtlin for FET arrays

Abstract

This disclosure relates to the high-speed and high-precision characterization of VTSAT and VTLIN of FET arrays, which is related to circuit structures, and in particular, to the high-speed and high-precision characterization of VTSAT and VTLIN of detection FET arrays The circuit structure, its preparation method and application. The circuit includes a control loop consisting of a differential amplifier, a plurality of FET arrays and at least one analog switch enabling selection between a calibration mode and an operating mode.

Description

technical field [0001] This disclosure relates to circuit structures, and more particularly, to circuit structures for performing high-speed and high-precision characterization of VTSAT and VTLIN of FET arrays, and their manufacture and use. Background technique [0002] Field effect transistors (FETs) used in SRAM and analog circuits (e.g. differential amplifiers, DACs, ADCs) require VTsat and VTlin measured with high precision (less than 1 mV range) and high speed to characterize / quantify the die Components (devices) on it. VTsat and VTlin need to be quantified both absolutely and relative between devices to allow customers to match devices used in eg DACs, ADCs, etc. [0003] High precision targets are set by mismatch effects on performance degradation susceptibility of several analog circuits. High speed is required whereby as many devices as possible can be measured to determine reliable statistics in a short time. This is driven vigorously with eg SRAM. [0004] VT...

AI Technical Summary

Problems solved by technology

However, a trade-off must be made between the number of repetitions (test time) and the achieved precision of VTsat and VTlin precision

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