Doped and modified lead zirconate-titanate piezoelectric ceramic and preparation method thereof

A technology of lead zirconate titanate and piezoelectric ceramics, which is applied in the field of piezoelectric ceramics, can solve problems such as cost increase, performance degradation, and deviation of the stoichiometric ratio of piezoelectric ceramics, and achieve an increase in mechanical quality factor, high electromechanical coupling coefficient, and pressure The effect of high gauge factor

Active Publication Date: 2018-05-04
WEIFANG GOERTEK MICROELECTRONICS CO LTD
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Problems solved by technology

The volatilization of PbO not only causes the stoichiometric ratio of piezoelectric ceramics to deviate from the original design formula, which reduces its performance, but also causes harm to the environment and human health. On the other hand, high sintering temperature will also increase the cost.

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  • Doped and modified lead zirconate-titanate piezoelectric ceramic and preparation method thereof

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Embodiment Construction

[0046] Various exemplary embodiments of the present invention will now be described in detail with reference to the accompanying drawings. It should be noted that the relative arrangements of components and steps, numerical expressions and numerical values ​​set forth in these embodiments do not limit the scope of the present invention unless specifically stated otherwise.

[0047] The following description of at least one exemplary embodiment is merely illustrative in nature and in no way taken as limiting the invention, its application or uses.

[0048] Techniques, methods and devices known to those of ordinary skill in the relevant art may not be discussed in detail, but where appropriate, such techniques, methods and devices should be considered part of the description.

[0049] In all examples shown and discussed herein, any specific values ​​should be construed as exemplary only, and not as limitations. Therefore, other instances of the exemplary embodiment may have dif...

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Abstract

The invention discloses a doped and modified lead zirconate-titanate piezoelectric ceramic and a preparation method thereof. The doped and modified lead zirconate-titanate piezoelectric ceramic is shown in a following chemical formula I, namely xPb(Mg1/3Nb2/3)O3-yPb(Ni1/3Nb2/3)O3-(1-x-y)Pb(Ti1/2Zr1/2)O3+lSrCO3+mZnO+nQ, wherein Q is at least selected from Li2CO3 (lithium carbonate), CuO (copper oxide), SiO2 (silicon dioxide), MnO2 (manganese dioxide), Bi2O3 (bismuth oxide) and La2O3 (lanthanum oxide); l, m and n are respectively the mass percentages of SrCO3 (strontium carbonate), ZnO (zinc oxide) and Q in the compound Pb(Mg1/3Nb2/3)O3-Pb(Ni1/3Nb2/3)O3-Pb(Ti1/2Zr1/2)O3; x is greater than or equal to 0.10 and is smaller than or equal to 0.70, y is greater than or equal to 0.08 and is smallerthan or equal to 0.38, l is greater than 0 and is smaller than or equal to 0.5, m is greater than 0 and is smaller than or equal to 0.50, and n is greater than or equal to 0 and is smaller than or equal to 0.5. The doped and modified lead zirconate-titanate piezoelectric ceramic has the excellent properties of low sintering temperature, high electromechanical coupling coefficient, high piezoelectric strain coefficient, small dielectric loss and the like.

Description

technical field [0001] The invention relates to the technical field of piezoelectric ceramics, in particular to a doped modified lead zirconate titanate piezoelectric ceramic and a preparation method thereof. Background technique [0002] Piezoelectric ceramic materials are widely used as an important functional material in piezoelectric resonators, piezoelectric buzzers, piezoelectric filters, High-tech fields such as piezoelectric transformers, piezoelectric speakers, piezoelectric igniters and piezoelectric motors. [0003] Piezoelectric ceramic materials include barium titanate (BaTiO 3 ), lead zirconate titanate (PZT)-based unary system and lead zirconate titanate-based ternary system, quaternary system, and multi-element piezoelectric ceramic materials. TiO 3 Ceramic materials have the fatal flaw of a poor temperature coefficient due to the second phase transition of crystals at room temperature. In addition, its Curie temperature is low and aging is too fast. Thu...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/491C04B35/622H01L41/187H01L41/43
CPCC04B35/491C04B35/622C04B2235/3232C04B2235/3244C04B2235/3251C04B2235/3279C04B2235/3284C04B2235/3296C04B2235/3213C04B2235/3206H10N30/8554H10N30/097
Inventor 高洪伟张子会俞胜平张法亮
Owner WEIFANG GOERTEK MICROELECTRONICS CO LTD
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