Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Conductive material and connecting structure

A technology of conductive materials and conductive particles, applied in conductive materials, conductive materials, conductors, etc., can solve problems such as reduced conductivity reliability

Active Publication Date: 2020-11-13
SEKISUI CHEM CO LTD
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, it is easy to reduce the reliability of conduction

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Conductive material and connecting structure
  • Conductive material and connecting structure
  • Conductive material and connecting structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1～17 and comparative example 1～2

[0299] (1) Preparation of anisotropic conductive paste

[0300] The components shown in the following Table 1 and Table 2 were compounded in the compounding quantities shown in the following Table 1 and Table 2, and the anisotropic conductive paste was obtained. In the obtained anisotropic conductive paste, the flux was present in the states shown in Tables 1 and 2.

[0301] (2) Fabrication of connection structure (array)

[0302] The following semiconductor chip was prepared as the first connection target part: Copper electrodes with a diameter of 250 μm and a thickness of 10 μm were arranged in an array on the surface of the semiconductor chip body (5×5 mm in size and 0.4 mm in thickness) at a pitch of 400 μm. The number of copper electrodes was 10×10 per semiconductor chip, 100 in total.

[0303] Prepare the following glass epoxy substrate as the second connection object part: On the surface of the glass epoxy substrate main body (size 20×20mm, thickness 1.2mm, material F...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle sizeaaaaaaaaaa
melting pointaaaaaaaaaa
particle sizeaaaaaaaaaa
Login to View More

Abstract

The present invention provides a conductive material that has high storage stability and exhibits excellent cohesiveness even if it is left for a long time after the conductive material is placed on a member to be connected, so that it can exhibit high conductivity reliability. The conductive material related to the present invention includes: a plurality of conductive particles having solder on the outer surface portion of the conductive part, a thermosetting component, and a flux. The flux is a salt formed by an acid and an alkali. In , the flux exists in solid form.

Description

technical field [0001] The present invention relates to a conductive material containing conductive particles having solder. Moreover, this invention relates to the bonded structure using the said electrically-conductive material. Background technique [0002] Anisotropic conductive materials such as anisotropic conductive pastes and anisotropic conductive films are widely known. In the above-mentioned anisotropic conductive material, conductive particles are dispersed in the binder. [0003] In order to obtain various connection structures, the above-mentioned anisotropic conductive materials can be used, for example, for the connection of flexible printed substrates and glass substrates (FOG (Film on Glass)), the connection of semiconductor chips and flexible printed substrates (COF (Chip on Film) ), the connection of semiconductor chips and glass substrates (COG (Chip on Glass)), and the connection of flexible printed circuit boards and glass epoxy substrates (FOB (Film...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01B1/22C08K3/08C08K5/09C08K5/17C08L63/00C08L101/00C09J9/02C09J11/04C09J11/06C09J201/00H01B1/00H01B5/16H01L21/60H05K3/32H05K3/36
CPCC08K3/08C08K5/09C08K5/17C09J9/02C09J11/04C09J11/06C09J201/00C08L63/00C08L101/00H01B1/00H01B1/22H01B5/16H05K3/32H05K3/36H01L2224/73204C08L101/025H05K3/3457H05K3/363
Inventor 夏井宏定永周治郎伊藤将大保井秀文石泽英亮
Owner SEKISUI CHEM CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com