Separated type near-field micro-nano photoetching method and device based on white light interferometry gap detection and ultraprecise aligned overlaying technology

Abstract

The invention discloses a separated type near-field micro-nano photoetching method and a device based on white light interferometry gap detection and an ultraprecise aligned overlaying technology. Themethod can achieve large-area separated type exposure and ultraprecise aligned overlaying. The device comprises an ultraprecise environmental control system, an active vibration isolation platform, asupporting framework, an ultraviolet exposure light source, a photoetching camera lens module, a gap detection system, an alignment module, a wafer chuck module and a control system. By means of a white light interference spectral measurement technology, the device can achieve nanoscale online gap detection and leveling; thus, separated type exposure is achieved; by means of the alignment moduleand the control system, the ultraprecise aligned overlaying technology can be achieved.

Description

technical field [0001] The present invention relates to the field of near-field micro-nano lithography processing technology, more specifically, to a separate near-field micro-nano lithography method and device based on white light interference precision gap detection and ultra-precision alignment overlay technology, which can realize separation super-resolution micro-nano lithography. Background technique [0002] With the rapid development of the IC industry, the miniaturization and storage density of electronic product integrated circuits are getting higher and higher, so it is urgent to develop processing technologies and equipment with high efficiency, low cost, large area and good controllability. At present, in the traditional microfabrication technology route, micron-scale processing equipment represented by laser direct writing, near-contact ultraviolet lithography, and reactive ion beam etching have been widely used in research units. Writing and focusing ion beam...

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved in the present invention is to overcome the short service life of the reticle, large lateral displacement after contact between the reticle and the substrate, and low alignment accuracy in the existing near-field lithography method in the contact exposure mode. For the deficiencies, a separate near-field micro-nano lithography method and device based on white light interference gap detection and ultra-precision alignment overlay technology are provided. Closed-loop feedback control of gap detection system and alignment module realizes separate exposure and ultra-precise alignment overlay functions

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