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Semiconductor structure and formation method thereof

A technology of semiconductor and radius of curvature, applied in semiconductor devices, semiconductor/solid-state device parts, electric solid-state devices, etc. Small curvature difference, the effect of reducing the influence

Inactive Publication Date: 2018-05-18
HUAIAN IMAGING DEVICE MFGR CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, the existing methods for forming semiconductor structures result in poor bonding quality between the device wafer and the carrier wafer

Method used

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  • Semiconductor structure and formation method thereof
  • Semiconductor structure and formation method thereof
  • Semiconductor structure and formation method thereof

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Experimental program
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Embodiment Construction

[0023] Existing wafer bonding methods are prone to poor bond quality.

[0024] Now combine a wafer bonding method to analyze the reasons for poor bonding quality:

[0025] The bonding method includes: providing a device wafer and a carrier wafer; and bonding the device wafer and the carrier wafer.

[0026] Wherein, during the process of forming the device wafer, due to the influence of the production process, the device wafer is prone to bending. In addition, the process of forming the device wafer needs to reduce the thickness of the device wafer through chemical mechanical thinning, so that in the direction perpendicular to the contact surface of the device wafer and the carrier wafer, the cross-sectional inertia of the device wafer If the moment is reduced, the bending resistance of the device wafer is weakened, resulting in a significant increase in the bending degree of the device wafer. Bending of the device wafer can easily cause air bubbles or gaps between the device...

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Abstract

The invention provides a semiconductor structure and a formation method thereof. The method comprises that a device wafer including a first device side and a second device side with a first curvatureand opposite to the first device side is provided, a bearing wafer including a first bearing side and a second bearing side with a second curvature, different from the first curvature, and opposite tothe first bearing side is provided; a stress layer is formed in surface the first bearing side and / or the first device side to reduce the difference between the first and second curvatures; and the bearing wafer and the device wafer are bonded via the second device side and the second bearing side. The method can be used to improve the performance of the formed semiconductor structure.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] Wafer bonding is a technology in which two wafers are directly bonded under certain conditions, and the wafers are bonded together through van der Waals force, molecular force or even atomic force. The quality of wafer bonding has an important impact on the performance of the formed semiconductor device. If the bonding quality is poor, it is easy to cause bubbles or gaps between the wafers, thereby affecting the performance of the formed semiconductor structure. Especially in the manufacturing process of the back-illuminated image sensor, the bonding quality of the carrier wafer and the device wafer easily affects the imaging quality of the formed image sensor. [0003] A back-illuminated image sensor includes a device wafer including a front side and a back side with photos...

Claims

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Application Information

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IPC IPC(8): H01L27/146H01L23/00
CPCH01L23/562H01L27/1464H01L27/1469
Inventor 王月陈世杰黄晓橹
Owner HUAIAN IMAGING DEVICE MFGR CORP