Terahertz modulator and manufacturing method thereof

Abstract

The invention discloses a terahertz modulator and a manufacturing method thereof. The terahertz modulator comprises a substrate, a buffer layer, and a heterojunction epitaxial layer. The heterojunction epitaxial layer is provided with a plurality of rows of high electron mobility transistors. The high electron mobility transistors of each row are connected in series. Ohmic electrodes of high electron mobility transistors of all rows are connected with a first lead electrode. Grid electrodes of the high electron mobility transistors of each two adjacent rows are connected. The grid electrodes control channel conduction between two adjacent ohmic electrodes of each row, to realize conversion of a composite metasurface structure between a resonance metasurface and a wire grating. For a terahertz wave whose polarization direction is parallel to grids of the wire grating, the resonance metasurface has high transmissivity in a range of lower than couple pole resonant frequency, and a wire grating having high conductivity forbids the terahertz wave with the polarization. Since the wire grating has a broadband characteristic, the device can realize broadband and high-efficiency terahertz modulation.

Description

technical field [0001] The invention belongs to the technical field of terahertz devices, and in particular relates to a terahertz modulator and a preparation method thereof. Background technique [0002] Terahertz wave (Terahertz wave) is a section of electromagnetic spectrum resources that has not been widely used by human beings, and it is in the transition zone from macroelectronics to microphotonics. The photon energy of terahertz waves is equivalent to the excitation energy of phonons and plasmons in solids, the rotation and vibration energy of gas molecules and organic molecules, and the energy of hydrogen bonds in macromolecules. Chemical and structural information has important scientific and application value in the fields of materials, information, biomedicine and astronomy, and is also one of the important foundations of science and technology for the next generation of information industry. Therefore, the development of terahertz science and technology is of gr...

AI Technical Summary

Problems solved by technology

[0005] The modulation depth of terahertz modulators in the prior art is generally not high, and the highest can only reach 50%. High-speed modulation is one of the most important performance indicators of modulators

Even if some metamaterial devices can obtain a higher modulation depth, due to their resonance characteristics, the device can only work in a narrow band, and it is necessary to design corresponding metamaterial structures for different carriers

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