Wafer processing method
A processing method and wafer technology, which are applied in metal processing equipment, manufacturing tools, laser welding equipment, etc., can solve the problems of detection of the predetermined line of separation, the trouble of detection of the predetermined line of separation, etc., and achieve the effect of easy detection.
Active Publication Date: 2022-02-11
DISCO CORP
View PDF4 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0007] However, when the metal film is laser processed from the back side of the wafer, since the metal film is formed on the back side of the wafer, there is a problem that it is impossible to detect the planned dividing line formed on the front side.
In Patent Document 1, there is no description about the method of detecting the planned dividing line from the back side of the wafer, but for example, the detection of the planned dividing line is very troublesome because the following work is required: The film is removed and the planned dividing line is detected from the back side of the wafer with an infrared camera
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0024] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. when referring to figure 1 (A) shows a front perspective view of a semiconductor wafer (hereinafter, sometimes simply referred to as a wafer) 11 . figure 1 (B) is a sectional view of the semiconductor wafer 11 .
[0025] On the front surface 11a of the wafer 11, a plurality of dividing lines 13 formed in a grid pattern are formed, and devices 15 such as LSIs are formed in each region defined by the intersecting dividing lines. Such as figure 1 As shown in (B), a metal film 21 made of copper (Cu), aluminum (Al), or the like is formed on the back surface 11 b of the wafer 11 .
[0026] Before implementing the wafer processing method according to the embodiment of the present invention, processing is carried out in the form of a wafer unit 17 in which the wafer 11 is pasted on the dicing tape T attached to the ring frame F on the outer periphery. made.
[0027...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
Provided is a method for processing a wafer having a front surface on which devices are formed in each region divided by a plurality of intersecting predetermined dividing lines, and a metal film formed on a back surface of the wafer, characterized in that the method has the following features: Steps: cutting step, cutting the wafer from the front side of the wafer along the predetermined dividing line with a cutting tool to form a cutting groove that does not reach the metal film; protective film forming step, after the cutting step is implemented, to the wafer's edge A water-soluble resin is provided on the front side, and the front side of the wafer and the cutting groove are covered with a protective film composed of the water-soluble resin; in a laser processing step, after the protective film forming step is performed, the front side of the wafer is The cutting groove is irradiated with a laser beam having a wavelength absorbing the metal film to break the metal film together with the wafer; and a protective film removal step, after the laser processing step is performed, the wafer is cleaned to remove the Protective film removed.
Description
technical field [0001] The present invention relates to a method of processing a wafer, which divides a wafer on which a metal film is formed on the back surface into individual chips. Background technique [0002] A wafer such as a semiconductor wafer has a front surface in which devices are respectively formed in regions defined by a plurality of crossing planned dividing lines, and the wafer is divided into individual device chips by cutting along the dividing planned lines. [0003] In such a wafer, a metal film is sometimes formed on the back surface in order to maintain good electrical characteristics of the device. When cutting the metal film with a cutting tool, the cutting tool will clog. When the wafer is cut, cracks are generated in the wafer, and there is a problem of tool damage. [0004] On the other hand, when the wafer is fully diced with a laser beam having an absorbing wavelength for the wafer, metal debris generated by irradiating the metal film with the ...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/78B23K26/18
CPCH01L21/78B23K26/18H01L21/76H01L21/56B23K26/38
Inventor 山田洋照
Owner DISCO CORP