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Film bulk acoustic wave resonator

A thin-film bulk acoustic wave and resonator technology, applied to electrical components, impedance networks, etc., can solve the problems of strengthening standing wave reflection energy and reducing Q value, and achieve the effect of reducing reflection energy and improving Q value

Active Publication Date: 2018-06-08
WUHAN YANXI MICRO COMPONENTS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Traditional graphics, it is easy to strengthen the reflected energy of the standing wave, thereby reducing the Q value

Method used

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Examples

Experimental program
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Effect test

Embodiment 1

[0032] This embodiment provides a thin film bulk acoustic resonator, such as Figure 4 As shown, it includes a substrate 105, a bottom electrode 103, a piezoelectric layer 102, and a top electrode 101 arranged sequentially from bottom to top, wherein a reflective interface is provided between the substrate 105 and the bottom electrode 103, and the bottom electrode 103, the piezoelectric layer At least one of the electrical layer 102 and the top electrode 101 is added with at least one bump of the same material as the original structure of the layer; the thickness of the bump is consistent with the original structure of the layer. Then, the manufacturing process of the bump is the same as that of other structures in the layer, and only one more bump needs to be grown during the manufacturing.

[0033] In this embodiment, the bump is an independent bump with a certain distance (greater than 0, less than or equal to 100 um) from the original structure of the layer. To further il...

Embodiment 2

[0038] The structure and principle of this embodiment are the same as Embodiment 1, the difference is: Figure 5 As shown, the bump is a connecting bump connected to the original structure of the layer. The thickness of the connection bump is consistent with the layer it is on. The preparation process of the connecting bump is the same as that of other structures in the layer, and only the shape of the outer contour needs to be controlled during the preparation.

[0039] The longest dimension of the connection bump is 1nm-100um.

[0040] Taking the top electrode 101 as an example, three connection bumps 1014 are connected at any position on the outer contour 1011 of the top electrode. In addition, one connection bump 1014 may be connected to the top electrode 101 , two connection bumps may be connected to the piezoelectric layer 102 , and three connection bumps may be connected to the bottom electrode 103 . The number of connection bumps in each layer is not limited, and th...

Embodiment 3

[0044] This embodiment provides a thin film bulk acoustic resonator, comprising a substrate 105, a bottom electrode 103, a piezoelectric layer 102 and a top electrode 101 arranged in sequence from bottom to top, wherein a reflective interface is provided between the substrate 105 and the bottom electrode 103, At least one of the bottom electrode 103 , the piezoelectric layer 102 and the top electrode 101 is provided with a missing block, and the missing block is located in the original structure and is close to the edge of the active area. The clear definition of the active area is: the overlapping area of ​​the top electrode 101 , the piezoelectric layer 102 and the bottom electrode 103 , and there is a reflective interface under the overlapping area.

[0045] Taking the top electrode 101 as an example, as Figure 6 As shown, there is at least one missing piece 1015 at any position in the middle of the top electrode 101 . The height of the missing piece 1015 is less than or ...

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Abstract

The present invention provides a film bulk acoustic wave resonator. The film bulk acoustic wave resonator comprises a substrate, a bottom electrode, a piezoelectric layer and a top electrode which arearranged in order from bottom to top. A reflection interface is arranged between the substrate and the bottom electrode, and in the bottom electrode, the piezoelectric layer and the top electrode, atleast one layer is different from the other layers in shape. On the premise that process layers are not extra added, a bump or a deformed block is added to regulate the shape of the top electrode, the piezoelectric layer or the bottom electrode to perform energy attenuation of lateral waves, reduce the reflection energy of the lateral waves and improve a Q value.

Description

technical field [0001] The invention belongs to the field of bulk acoustic wave resonators, in particular to a film bulk acoustic wave resonator. Background technique [0002] With the evolution of the communication frequency band, the required frequency is getting higher and higher. Under the high frequency requirement, the resonator needs to provide a better Q value to reduce the loss of the filter and obtain a higher quality filter response. . Traditional graphics tend to strengthen the reflected energy of the standing wave, thereby reducing the Q value. Contents of the invention [0003] The technical problem to be solved by the present invention is to provide a thin-film bulk acoustic resonator, which can reduce the reflected energy of transverse waves and improve the Q value without additionally increasing the number of process layers. [0004] The technical solution adopted by the present invention to solve the above-mentioned technical problems is: a thin film bu...

Claims

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Application Information

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IPC IPC(8): H03H9/02H03H9/05H03H9/17
CPCH03H9/02015H03H9/02047H03H9/0514H03H9/174
Inventor 廖珮淳
Owner WUHAN YANXI MICRO COMPONENTS CO LTD
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