Method for preparing superhydrophobic surface of silicon-based micro-nano two-level structure

A super-hydrophobic surface and secondary structure technology, applied in chemical instruments and methods, crystal growth, post-processing details, etc., can solve the problems of inaccurate control of super-hydrophobic structure and low water collection rate, and achieve excellent super-hydrophobic performance, Good stability and novel structure

Active Publication Date: 2018-06-15
ZHEJIANG UNIV OF TECH
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Problems solved by technology

[0003] In order to solve the shortcomings of low water collection rate and inaccurate control of the preparation of superhydrophobic structure in the existing preparation method, the present invention proposes a preparation method combining wet etching and sol-gel method to obtain a A new preparation method of silicon-based micro-nano secondary structure superhydrophobic surface

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  • Method for preparing superhydrophobic surface of silicon-based micro-nano two-level structure
  • Method for preparing superhydrophobic surface of silicon-based micro-nano two-level structure
  • Method for preparing superhydrophobic surface of silicon-based micro-nano two-level structure

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Embodiment Construction

[0048] The present invention will be further described below in conjunction with the accompanying drawings and through specific embodiments. The following embodiments are only descriptive, not restrictive, and cannot limit the protection scope of the present invention once.

[0049] A method for preparing a silicon-based micro-nano secondary structure superhydrophobic surface, comprising the following steps:

[0050] (1) Preparation of silicon-based superhydrophobic layer microstructure. Specifically include the following steps:

[0051] a. Thermal oxidation

[0052] Deposition on the front side (polished side) of silicon wafers SiO 2 , as a mask material for KOH solution wet etching of silicon, it is found by looking up Table 1-2 that SiO 2 The corrosion rate in a 40% KOH solution at 50°C is 30.3nm / H, while the corrosion rate of Si in a 40% KOH solution at 50°C is 10.5μm / H, and the required corrosion depth does not exceed 10 µm, therefore, SiO 2 It is sufficient as a...

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Abstract

The invention relates to a method for preparing a superhydrophobic surface of a silicon-based micro-nano two-level structure by using wet etching and sol-gel methods and is applied to the field of dropwise-condensation water collecting. The method comprises three steps: preparing a silicon-based superhydrophobic-layer micron structure; preparing a silicon-based superhydrophobic-layer micron structure; and carrying out contact angle measurement. According to the method, the superhydrophobic surface of the micro-nano two-level structure is obtained by jointly adopting the two kinds of methods, i.e., a wet etching method and a sol-gel method; and the superhydrophobic surface has the advantages of novel structure, good stability and excellent superhydrophobic performance.

Description

technical field [0001] The invention relates to a method for preparing a silicon-based micro-nano secondary structure super-hydrophobic surface by wet etching and sol-gel method, which is used in the field of drop-like condensation self-collection water. Background technique [0002] The preparation of superhydrophobic layer is widely used in the field of droplet condensation self-collection, and it can usually be used as the condensation surface layer structure in condensation devices. Therefore, for the preparation of superhydrophobic layer, it is necessary to use a reasonable preparation method to obtain a good super A superhydrophobic surface layer with hydrophobic properties appears to be crucial. However, the superhydrophobic properties of the surface layers obtained by different preparation methods are very different, and because the microstructure is not easy to obtain and regularize the preparation, the most commonly used preparation methods are: stencil printing, c...

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Application Information

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IPC IPC(8): C09D1/00C30B33/10
CPCC09D1/00C30B33/10
Inventor 董健金焱立龙芝剑董鹤
Owner ZHEJIANG UNIV OF TECH
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