A kind of led chip, preparation method and led chip
A technology of LED chips and substrates, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of short life, poor heat dissipation, junction temperature, and poor heat dissipation effect.
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Embodiment 1
[0046] Embodiment 1 of the present application provides an LED chip, such as figure 1 What is shown includes: a substrate 101 , an epitaxial layer 102 and a first electrode layer 103 sequentially formed on the substrate 101 , and a heat conducting layer 104 formed on the back of the substrate 101 .
[0047] In the embodiment of the present application, the substrate 101 can be selected from sapphire, gallium arsenide and the like.
[0048]The epitaxial layer 102 includes an N-type layer, a light-emitting layer, and a P-type layer (not shown in the figure) sequentially formed on the substrate 101, and one side of the first electrode layer 103 and the epitaxial layer 102 is etched to expose the N-type layer, A second electrode layer 105 is formed on the exposed N-type layer.
[0049] The first electrode layer 103 is used to connect to the positive pole of the power supply; the second electrode layer 105 is used to connect to the negative pole of the power supply.
[0050] The ...
Embodiment 2
[0067] Embodiment 2 of the present application provides a method for preparing an LED chip, the flow chart is as follows Figure 5 As shown, the specific steps are as follows:
[0068] S200, forming an epitaxial layer on the substrate, where the epitaxial layer includes an N-type layer, a light-emitting layer, and a P-type layer sequentially formed on the substrate.
[0069] Such as Figure 6 As shown, an epitaxial layer 102 is formed on a substrate 101 , and the epitaxial layer includes an N-type layer 1021 , a light-emitting layer 1022 and a P-type layer 1023 formed on the substrate 101 in sequence.
[0070] S210, forming a first electrode layer on the P-type layer, where the first electrode layer is used to connect to a positive electrode of a power supply.
[0071] Wherein, in step S210, forming the first electrode layer on the P-type layer includes:
[0072] Such as Figure 7 As shown, a transmissive electrode layer 1031 is formed on the P-type layer 1023, and a P-typ...
Embodiment 3
[0090] Embodiment 3 of the present application proposes an LED wafer, including the LED chip proposed in Embodiment 1.
[0091] Compared with the prior art, the LED chip proposed in the embodiment of the present application includes: a substrate, an epitaxial layer and a first electrode layer sequentially formed on the substrate, and a heat conduction layer formed on the back of the substrate; The epitaxial layer includes an N-type layer, a light-emitting layer, and a P-type layer sequentially formed on the substrate, and one side of the first electrode layer and the epitaxial layer is etched to expose the N-type layer. A second electrode layer is formed on the exposed N-type layer; the first electrode layer is used to connect to the positive pole of the power supply; the second electrode layer is used to connect to the negative pole of the power supply; the back of the substrate is provided with multiple The heat dissipation groove embedded in the substrate; the heat conducti...
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