SRAM (Static Random Access Memory) unit circuit and SRAM

Abstract

An embodiment of the invention provides a voltage adjustment unit, which is used for decreasing the voltage of a substrate where a PMOS (Positive-channel Metal Oxide Semiconductor) transistor is located to 0.8 time of the voltage of an SRAM unit when the SRAM unit is standby; thus, the substrate where a PMOS is located can be enabled to be in a forward bias state; the formation of a leakage current in the PMOS transistor is facilitated; the leakage current can be used for compensating a leakage current in an NMOS (Negative-channel Metal Oxide Semiconductor) transistor; therefore, the problem of the data loss or inversion of a storage node, which is caused by the leakage current of the NMOS transistor can be prevented; the stability of the SRAM unit in a standby state is improved, and moreover, the voltage adjustment unit provided by the embodiment of the invention does not need to adjust the internal structure and a production method of the SRAM unit.

Description

technical field [0001] Embodiments of the present invention relate to the field of semiconductor technology, and in particular to the field of memory. Background technique [0002] With the continuous development of modern high-tech industries represented by electronic communication technology, the total output value of the world's integrated circuit industry is growing at a rate of more than 60% per year. As an important storage device, SRAM (Static Random Access Memory) is Widely used in the design of digital and various electronic circuit products. SRAM is an important component in analog logic circuits, and it is widely used in data storage because of its advantages of low power consumption and high reading speed. It is a memory with static access function, which can save the data stored in it without refreshing the circuit. Please refer to figure 1 A schematic diagram of the MOS layout structure of the SRAM cell of the prior art shown, the SRAM cell includes: [000...

AI Technical Summary

Problems solved by technology

[0006] In order to solve the technical problem that the state of the SRAM unit is unstable in the standby state, and there is data loss or inversion, the embodiment of the present invention provides a static random access memory, which improves the stability of the SRAM unit and solves the data loss of the SRAM unit or reverse the problem

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