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A method for preparing perovskite nanocrystalline film by spraying
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A nanocrystal, perovskite technology, applied in nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc., can solve the problems of uneven film, poor solution stability, inability to evaporate to dryness quickly, etc. Film speed effect
Active Publication Date: 2019-12-20
XI AN JIAOTONG UNIV
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Problems solved by technology
[0003] The existing spraying method does not use substrate heating in the process of preparing nanocrystalline films, and the droplets formed by continuous spraying cannot evaporate quickly on the surface of the substrate, forming an uneven film
Various types of perovskite nanocrystals are synthesized by the solution method, but their solution stability is worse than that of traditional types of nanocrystals. There is no report on the preparation of perovskite nanocrystal films by spraying, so it is very necessary to optimize spraying process, so that uniform and dense perovskite nanocrystalline films with controllable thickness can be obtained
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Embodiment 1
[0030] 1) CsPbBr 3 Quantum dots were dispersed into n-hexane to obtain CsPbBr at a concentration of 0.5 mg / mL 3 Quantum dot dispersion;
[0031] 2) CsPbBr 3 Put the quantum dot dispersion into a spray bottle and install it on the spray gun. The base area is 2×2cm 2 , adjust the distance between the spray gun and the horizontally placed glass substrate to be 4cm, through EFD's Ultimus TM The I dispensing platform can precisely control the air pressure to 100Kpa, and the liquid output of the spray gun is 0.02mL / s;
[0032] 3) Move the substrate on the horizontal displacement stage at a constant speed, and spray at 25°C for 30s;
[0033] 4) CsPbBr 3 The quantum dot film was annealed on a hot stage at 90° C. for 15 minutes to obtain a perovskite nanocrystalline film.
Embodiment 2
[0035] 1) CsPbBr 3 Quantum dots were dispersed into n-hexane to obtain CsPbBr at a concentration of 0.5 mg / mL 3 Quantum dot dispersion;
[0036] 2) CsPbBr 3 Put the quantum dot dispersion into a spray bottle and install it on the spray gun. The base area is 2×2cm 2 , adjust the distance between the spray gun and the horizontally placed silicon wafer substrate to be 4cm, through EFD's Ultimus TM The I dispensing platform can precisely control the air pressure to 100Kpa, and the liquid output of the spray gun is 0.02mL / s;
[0037] 3) After heating the substrate to 60°C, move the substrate on the horizontal displacement stage at a constant speed, and spray for 30s;
[0038] 4) CsPbBr 3 The quantum dot film was annealed on a hot stage at 90 °C for 15 min.
Embodiment 3
[0040] 1) CsPbBr 3 Quantum dots were dispersed into n-hexane to obtain CsPbBr at a concentration of 0.5 mg / mL 3 Quantum dot dispersion;
[0041] 2) CsPbBr 3 Put the quantum dot dispersion into a spray bottle and install it on the spray gun. The base area is 2×2cm 2 , adjust the distance between the spray gun and the horizontally placed PET substrate to be 4cm, through EFD's Ultimus TM The I dispensing platform can precisely control the air pressure to 100Kpa, and the liquid output of the spray gun is 0.02mL / s;
[0042]3) After heating the substrate to 90°C, move the substrate on the horizontal displacement stage at a constant speed, and spray for 30s;
[0043] 4) CsPbBr 3 The quantum dot film was annealed on a hot stage at 90 °C for 15 min.
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Abstract
A method for preparing a perovskite nanocrystal film by spraying, dispersing the perovskite nanocrystal into an organic solvent to obtain a perovskite nanocrystal dispersion; putting the perovskite nanocrystal dispersion into a spray bottle and installing it in On the spray gun, adjust the distance between the spray gun and the substrate, the liquid output volume and air pressure of the spray gun; then heat the substrate for spraying, and after annealing, obtain a perovskite nanocrystalline film. The perovskite nanocrystalline film obtained by the present invention has high density and flat surface, and can be applied to the preparation of photoelectric devices such as solar cells, photodetectors and light-emitting diodes. At the same time, the method has the advantages of high material utilization rate, fast film forming speed, and large Advantages of area preparation.
Description
technical field [0001] The invention belongs to the field of preparation of nanocrystalline thin films, and in particular relates to a method for preparing perovskite nanocrystalline thin films by spraying. Background technique [0002] In recent years, the solution-based controllable preparation of metal and semiconductor nanocrystalline materials has developed by leaps and bounds. A film preparation process to obtain dense and flat nanocrystalline films with adjustable thickness. A variety of preparation processes for solution-processable nanocrystalline films include spin-coating, pull-up, spray-coating, and solution self-assembly methods, but their applicable occasions are not the same. The spin coating method uses centrifugal force to shake off excess solvent and solute from the substrate, and can prepare nanocrystalline films with a thickness of tens to hundreds of nanometers. The disadvantage is that it is only suitable for the preparation of small-area films, and th...
Claims
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Application Information
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