Method and device for reading and writing data
A technology for writing and reading data, applied in electrical digital data processing, instruments, memory systems, etc., can solve problems such as strong dependencies, and achieve the effect of balancing performance and stability, reducing size, and reducing dependencies
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Embodiment 1
[0026] refer to figure 1 , which shows a flow chart of the steps of a method embodiment of writing data of the present invention, the method of writing data can be applied to a NAND flash memory system, and the method of writing data can specifically include the following steps:
[0027] Step S10, receiving a write data request; the write data request may include data to be written and a logical area corresponding to the data to be written.
[0028] Wherein, the data to be written may be any type of data.
[0029] Step S20, storing the data to be written into at least one physical block area in the NAND flash memory system.
[0030] Step S30, establishing a mapping relationship between the first address and length of each physical block area and the first address of the logical block corresponding to the data stored in the physical block area, as a mapping node in the mapping table.
[0031] It should be noted that in step S20, the physical addresses of each physical block a...
Embodiment 2
[0040] refer to figure 2 , which shows a flow chart of the steps of an embodiment of a method for reading data of the present invention, the method for reading data can be applied to a NAND flash memory system, and the method for reading data can include:
[0041] Step S101, receiving a read data request; the read data request includes a logic area to be read.
[0042] Step S201, according to the first address of the logical area to be read and the last address of the logical area to be read, determine each mapping node that needs to be called for the read data request; the mapping node is the first address and length of the physical block area in the mapping table, and the physical block area The storage data corresponds to the mapping relationship between the first addresses of the logical blocks.
[0043] Wherein, when the first address of the logical area to be read and the last address of the logical area to be read are in the same mapping node, the data read request on...
Embodiment 3
[0049] refer to image 3 , which shows a flow chart of the steps of another method embodiment for reading data of the present invention, the method for reading data can be applied to a NAND flash memory system, and the method for reading data can include:
[0050] Step S110, receiving a read data request; the read data request includes a logic area to be read.
[0051] Step S210, according to the first address of the logical area to be read and the last address of the logical area to be read, determine each mapping node to be called by the read data request; the mapping node is the first address and length of the physical block area in the mapping table, and the physical block area The storage data corresponds to the mapping relationship between the first addresses of the logical blocks.
[0052] Specifically, in one embodiment of the present invention, step S210 determines each mapping node to be called by the read data request, which may include:
[0053] Step S211, traver...
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