A sensor device with reference capacitance and its manufacturing method
A sensor device and reference capacitor technology, applied in the sensor field, can solve the problems of unfavorable package integration, large sensor heat radiation, etc., and achieve the effect of improving heat dissipation efficiency and avoiding parasitic capacitance problems.
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[0033] refer to Figure 7 , the sensor device with reference capacitance of the present invention, it comprises:
[0034] A substrate 1, said substrate 1 comprising a front side with a semiconductor element 2, a back side opposite to said front side, and sides perpendicular to said front side and back side;
[0035] In the groove 7 on the back side of the substrate 1, the depth of the groove 7 is less than or equal to half of the thickness of the substrate 1, and the bottom surface of the groove 7 has a plurality of strip-shaped grooves evenly arranged Road 8;
[0036] A plurality of sheet-shaped conductive fins 9, the ends of the sheet-shaped conductive fins 9 are inserted into the strip-shaped channel 8, and protrude from the groove 7;
[0037] A plurality of first pads 3 on the front side of the substrate 1 and wiring layers 10 on both sides of the groove 7 on the back side of the substrate 1, and the wiring layers 10 are respectively electrically connected to the The tw...
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