Electrically controlled terahertz wave switch with multilayer metal layer structures

Abstract

The invention discloses an electrically controlled terahertz wave switch with multilayer metal layer structures. The electrically controlled terahertz wave switch includes a substrate layer, a silicondioxide layer and a multilayer metal structure array layer. The multilayer metal structure array layer is composed of 6*6 arranged multilayer metal unit structures, and each multilayer metal unit structure is composed of an upper rectangular metal layer, a middle bridge-shaped metal layer and a lower stair-shaped metal layer. When terahertz signals vertically irradiate a terahertz wave switch andno voltage exists between the upper rectangular metal layers and the substrate layer, due to the discontinuity among the metal layers, the intensities of induced electric fields and magnetic fields at the upper and lower sides of the switch are lowest, terahertz waves can pass, and the switch is in a switch-on state; when voltage is applied between the upper rectangular metal layers and the substrate layer, the middle bridge-shaped metal layers deflect and are connected with the lower trapezoidal metal layers, at this time, the discontinuity among the metal layers is eliminated, surface currents are formed on metal electrons, therefore, extremely large electric fields and magnetic fields are generated at the top of the switch, the terahertz waves are reflected, and the switch is in a switch-off state; the electrically controlled terahertz wave switch with the multilayer metal layer structures has the advantages of being simple and compact in structure, small in size, novel in controlprinciple, easy to process and the like.

Description

technical field

[0001] The invention relates to a terahertz wave switch, in particular to an electrically controlled terahertz wave switch with a multilayer metal layer structure. Background technique

[0002] In recent years, terahertz technology, which is in the transitional region from macroscopic electronics to microscopic electronics, is a new technology developed in the late 1980s. The unique frequency range of terahertz waves (located between the microwave frequency band and the optical frequency band) covers the molecular vibration and rotation spectra of most macromolecular substances, so most macromolecular substances in the terahertz frequency band regardless of their absorption, reflection or emission spectra have Obvious fingerprint characteristics, which is not available in microwave. The rapid progress of terahertz wave radiation sources and detection methods has promoted the quiet rise of related device functions. Therefore, the research on terahertz techno...

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