Electrically controlled terahertz wave switch with multilayer metal layer structures

A multilayer metal and layer structure technology, applied in the field of terahertz wave switches, can solve the problems of high processing technology and processing environment, complex structure, high cost, etc., and achieve the effect of novel control principle, simple and compact structure, and easy processing

Inactive Publication Date: 2018-07-24
CHINA JILIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The terahertz wave switch structures researched and proposed at home and abroad are mainly based on structures such as photonic crystals and surface plasmons. demanding

Method used

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  • Electrically controlled terahertz wave switch with multilayer metal layer structures
  • Electrically controlled terahertz wave switch with multilayer metal layer structures
  • Electrically controlled terahertz wave switch with multilayer metal layer structures

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Embodiment 1

[0020] In this embodiment, the structure of the electronically controlled terahertz wave switch with a multilayer metal layer structure is as described above ( Figure 1-7),No longer. However, the parameters adopted by each device are as follows: the material of the base layer 1 is P-type silicon material, the length of the main body of the base layer 1 is 600 μm, the width is 240 μm, and the thickness is 5.5 μm; each longitudinal cuboid on the top surface of the base layer 1 main body The length of each horizontal cuboid is 8 μm, the width is 10 μm, and the height is 3 μm; the length of each transverse cuboid is 3 μm, the width is 2 μm, and the height is 3 μm. The overall length of the silicon dioxide layer 2 is 600 μm, the width is 240 μm, and the thickness is 3 μm; wherein, the total length of the tooth-shaped slots is 63 μm, the width is 10 μm, and the height is 3 μm; there are 10 symmetrically arranged on both sides of the tooth-shaped slots. Each rectangular block has a...

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Abstract

The invention discloses an electrically controlled terahertz wave switch with multilayer metal layer structures. The electrically controlled terahertz wave switch includes a substrate layer, a silicondioxide layer and a multilayer metal structure array layer. The multilayer metal structure array layer is composed of 6*6 arranged multilayer metal unit structures, and each multilayer metal unit structure is composed of an upper rectangular metal layer, a middle bridge-shaped metal layer and a lower stair-shaped metal layer. When terahertz signals vertically irradiate a terahertz wave switch andno voltage exists between the upper rectangular metal layers and the substrate layer, due to the discontinuity among the metal layers, the intensities of induced electric fields and magnetic fields at the upper and lower sides of the switch are lowest, terahertz waves can pass, and the switch is in a switch-on state; when voltage is applied between the upper rectangular metal layers and the substrate layer, the middle bridge-shaped metal layers deflect and are connected with the lower trapezoidal metal layers, at this time, the discontinuity among the metal layers is eliminated, surface currents are formed on metal electrons, therefore, extremely large electric fields and magnetic fields are generated at the top of the switch, the terahertz waves are reflected, and the switch is in a switch-off state; the electrically controlled terahertz wave switch with the multilayer metal layer structures has the advantages of being simple and compact in structure, small in size, novel in controlprinciple, easy to process and the like.

Description

technical field [0001] The invention relates to a terahertz wave switch, in particular to an electrically controlled terahertz wave switch with a multilayer metal layer structure. Background technique [0002] In recent years, terahertz technology, which is in the transitional region from macroscopic electronics to microscopic electronics, is a new technology developed in the late 1980s. The unique frequency range of terahertz waves (located between the microwave frequency band and the optical frequency band) covers the molecular vibration and rotation spectra of most macromolecular substances, so most macromolecular substances in the terahertz frequency band regardless of their absorption, reflection or emission spectra have Obvious fingerprint characteristics, which is not available in microwave. The rapid progress of terahertz wave radiation sources and detection methods has promoted the quiet rise of related device functions. Therefore, the research on terahertz techno...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/025H01P1/10
CPCG02F1/025H01P1/10
Inventor 李九生李邵和
Owner CHINA JILIANG UNIV
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