Electrically controlled terahertz wave switch with multilayer metal layer structures
A multilayer metal and layer structure technology, applied in the field of terahertz wave switches, can solve the problems of high processing technology and processing environment, complex structure, high cost, etc., and achieve the effect of novel control principle, simple and compact structure, and easy processing
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[0020] In this embodiment, the structure of the electronically controlled terahertz wave switch with a multilayer metal layer structure is as described above ( Figure 1-7),No longer. However, the parameters adopted by each device are as follows: the material of the base layer 1 is P-type silicon material, the length of the main body of the base layer 1 is 600 μm, the width is 240 μm, and the thickness is 5.5 μm; each longitudinal cuboid on the top surface of the base layer 1 main body The length of each horizontal cuboid is 8 μm, the width is 10 μm, and the height is 3 μm; the length of each transverse cuboid is 3 μm, the width is 2 μm, and the height is 3 μm. The overall length of the silicon dioxide layer 2 is 600 μm, the width is 240 μm, and the thickness is 3 μm; wherein, the total length of the tooth-shaped slots is 63 μm, the width is 10 μm, and the height is 3 μm; there are 10 symmetrically arranged on both sides of the tooth-shaped slots. Each rectangular block has a...
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