Manufacturing method of thin film transistor and manufacturing method of display substrate and display device

Abstract

The invention relates to the field of display, and particularly relates to a method manufacturing for a thin film transistor, a manufacturing method for the display substrate and a display device. Themanufacturing method of the thin film transistor comprises the steps of forming an active layer and forming an insulating layer covering the active layer, after the insulating layer is patterned, thethrough-hole of the active layer is exposed, treating the exposed surface of the active layer with plasma to remove organic impurities and / or oxides on the surface of the active layer. The manufacturing method of the thin film transistor adopts a dry method to process organic impurities on the surface of the active layer, avoids the pollution of the liquid medicine and improves the stability of the performance of the product. For the thin film transistor with the metal oxide as the active layer, the damage to the metal oxide can be avoided, and the management and the control of the product can be completed under the small uniformity variation.

Description

technical field [0001] The invention relates to the display field, in particular to a manufacturing method of a thin film transistor, a manufacturing method of a display substrate and a display device. Background technique [0002] OLED display panels have an array of pixels based on organic light emitting diodes. Each pixel includes an organic light emitting diode and a thin film transistor for controlling application of a signal to the organic light emitting diode. [0003] The manufacturing process of a thin film transistor is generally: depositing different film layers sequentially, such as a gate, a gate insulating layer, an active layer, a source electrode, and a drain electrode. The source and drain are in contact with the active layer. When the active layer is covered with an insulating layer, the source and drain electrodes are in contact with the active layer through the via holes. After the via hole is formed, in order to avoid impurities on the surface of the ...

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Problems solved by technology

[0004] When the chemical solution cleans the surface of the active layer, changes in the concentration of the chemical solution and contamination may lead to changes in the performance of the thin film transistor; and the chemical solution is easy to cause damage to the metal oxide active layer, resulting in failure or instability of the thin film transistor drive

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