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Integrated layer etch system with multiple type chambers

A chamber and etching technology used in the field of integrated layer etching systems

Inactive Publication Date: 2018-07-31
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, as the limits of circuit technology push forward, the shrinking dimensions of VLSI and ULSI technologies place additional demands on process capabilities

Method used

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  • Integrated layer etch system with multiple type chambers
  • Integrated layer etch system with multiple type chambers
  • Integrated layer etch system with multiple type chambers

Examples

Experimental program
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Embodiment Construction

[0016] figure 1 A processing chamber 100 is illustrated according to one example. The processing chamber 100 may be configured to remove material from a layer of material disposed on a surface of a substrate. The processing chamber 100 is particularly useful for performing plasma assisted dry etch processes.

[0017] The processing chamber 100 includes a chamber body 112 that defines a processing region 141 . The cover assembly 123 is disposed on the top end of the chamber body 112 and limits the processing area 141 . The support assembly 180 is disposed below the lid assembly 123 and at least partially within the chamber body 112 .

[0018] The chamber body 112 includes a slit valve opening 114 formed in a sidewall of the chamber body 112 to provide access to a processing region 141 of the processing chamber 100 . The slit valve opening 114 is selectively opened and closed by a gate (not shown) to allow access to the processing region 141 of the chamber body 112 by a wafe...

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Abstract

Embodiments described herein generally relate to a substrate processing system, such as an etch processing system. In one embodiment, a substrate processing system is disclosed herein. The substrate processing system includes a transfer chamber and a plurality of process chambers coupled to the transfer chamber. The plurality of process chambers includes a first process chamber, a second process chamber, and a third process chamber. The first process chamber is configured to directionally modify a surface of a film stack formed on the substrate. The second process chamber is configured to deposit an etchant on the surface of the film stack. The third process chamber is configured to expose the film stack to a high-temperature sublimation process.

Description

technical field [0001] Embodiments described herein relate to etching systems for substrate processing, and more particularly, to integrated layer etching systems having multiple types of chambers. Background technique [0002] Reliable production of sub-half micron and smaller features is a key technological challenge for next-generation VLSI and ULSI semiconductor devices. However, the ever-shrinking dimensions of VLSI and ULSI technologies place additional demands on process capabilities as the limits of circuit technology move forward. Reliable formation of gate structures on substrates is important to the success of VLSI and ULSI, as well as the ongoing effort to increase the circuit density and quality of individual substrates and dies. [0003] As the circuit density of next-generation devices increases, the width of interconnect structures (such as vias, trenches, contacts, gate structures, and other features) and the width of the dielectric material between interco...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/3065H01L21/3213H01L21/67H01L21/02
CPCH01L21/6719H01L21/67196H01L21/67207H01L21/67167H01L21/31116H01L21/02315H01L21/0234H01L21/3065H01L21/32136H01L21/67069H01L21/67098H01L21/3105
Inventor 张郢周清军乔纳森·日格胡尔·金姆
Owner APPLIED MATERIALS INC
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