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Power semiconductor device driving device and system with data acquisition function

A power semiconductor and data acquisition technology, applied in electrical components, pulse technology, electronic switches, etc., can solve the problems of low degree of intelligence, inability to collect IGBT operating status data, and inability to communicate and exchange data in real time with the host computer. performance, shortening the hardware development cycle, and simplifying the workload

Active Publication Date: 2018-08-14
CSR ZHUZHOU ELECTRIC LOCOMOTIVE RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In view of this, the purpose of the present invention is to provide a power semiconductor device drive device with data acquisition function, which solves the problem that the existing traditional IGBT drive has low intelligence, only has conventional drive and protection functions, and cannot control the IGBT operating status data. The technical problem of not being able to communicate and exchange data with the host computer in real time

Method used

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  • Power semiconductor device driving device and system with data acquisition function
  • Power semiconductor device driving device and system with data acquisition function
  • Power semiconductor device driving device and system with data acquisition function

Examples

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Embodiment 1

[0054] as attached figure 1 As shown, a specific embodiment of a power semiconductor device driving system with a data acquisition function includes: a driving board 1 , and an acquisition board 2 connected to the driving board 1 , a pulse board 3 and a detection board 4 . The lower stage of the driving board 1 is electrically connected to the detection board 4 and the power semiconductor device 5 , and the driving board 1 transmits the status information of the power semiconductor device 5 collected by the detection board 4 to the acquisition board 2 . The upper level of the drive board 1 is connected to the acquisition board 2 and the pulse board 3, and the drive board 1 receives the PWM pulse signal sent by the pulse board 3, and provides the power semiconductor device 5 with a turn-on or turn-off drive signal according to the PWM pulse signal (for IGBT Said to be the gate drive signal). The drive board 1 further includes a detection circuit. The drive board 1 obtains the ...

Embodiment 2

[0057] as attached image 3 As shown, a specific embodiment of a power semiconductor device driving device with a data acquisition function has the functions of realizing the isolation of the main circuit and the control unit, processing the PWM pulse signal, and performing power amplification and driving on the switching signal of the power semiconductor device 5 , and perform functions such as reliable protection on the power semiconductor device 5 . The power semiconductor device drive device specifically includes:

[0058] A control unit 11 , a data acquisition unit 12 , a pulse signal receiving and fault feedback unit 13 and a driving unit 14 are arranged on the driving board 1 . The control unit 11 is connected to the data acquisition unit 12 , the pulse signal receiving and fault feedback unit 13 , and the driving unit 14 respectively.

[0059] Under the control of the control unit 11 , the data acquisition unit 12 acquires the status information of the power semicond...

Embodiment 3

[0069] as attached figure 2 As shown, on the basis of Embodiment 2, one drive board 1 further drives two power semiconductor devices 5 simultaneously. as attached Figure 4 As shown, the detection board 4 further includes a first detection board 41 and a second detection board 42, and the first detection board 41 and the second detection board 42 respectively collect the operation status information of a power semiconductor device (ie, the IGBT in the figure) 5 . The control unit 11 further includes a first control unit 111 and a second control unit 112, the data acquisition unit 12 further includes a first data acquisition unit 121 and a second data acquisition unit 122, and the pulse signal receiving and fault feedback unit 13 further includes a first pulse signal The signal receiving and fault feedback unit 131 and the second pulse signal receiving and fault feedback unit 132 , the drive unit 14 further includes a first drive unit 141 and a second drive unit 142 .

[007...

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Abstract

The invention discloses a power semiconductor device driving device and system with the data acquisition function. Under the control of a control unit, a data acquisition unit obtains the power semiconductor device state information collected by an external detection board; the control unit transmits the power semiconductor device state information collected by the data acquisition unit to an external acquisition board; the control unit receives a pulse signal from an external pulse board through a pulse signal receiving and fault feedback unit, processes the pulse signal, and then sends a driving signal to the external power semiconductor device through a drive unit; and the control unit transmits a power semiconductor device fault signal to the pulse board through the pulse signal receiving and fault feedback unit. The power semiconductor device driving device and system with the data acquisition function can solve the technical problems that the driving device and system in the prior art have low intellectualization degree, only have the conventional driving and protection functions, can not collect the running state data of the power semiconductor device, and can not communicate with an upper computer in real time and exchange data with the upper computer.

Description

technical field [0001] The invention relates to the technical field of power semiconductors, in particular to an intelligent power semiconductor device driving device and system with data acquisition function. Background technique [0002] As a widely used power semiconductor device, since the advent of IGBT (Insulated Gate Bipolar Transistor, Insulated Gate Bipolar Transistor) in the 1980s, with its high switching speed, low saturation voltage drop, large current carrying capacity and many other Superiority, it will soon replace GTO (Gate Turn-Off Thyristor, the abbreviation of Gate Turn-Off Thyristor), and become the core device in the fields of rail transportation, industrial transmission, new energy and other fields. With the continuous improvement and development of IGBT power density, switching speed, and voltage level, the development of IGBT application technology is also changing with each passing day. [0003] The core of IGBT application technology is IGBT drive ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03K17/567
CPCH03K17/567
Inventor 杨乐乐杨涛李彦涌谢舜蒙魏海山欧阳柳唐威张东辉蒋林马龙昌
Owner CSR ZHUZHOU ELECTRIC LOCOMOTIVE RES INST
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