Physical-base large-signal modeling method and system for microwave gallium nitride devices

Abstract

The invention discloses a physical-base large-signal modeling method and system for microwave gallium nitride devices. The method includes the steps of obtaining test result data of each gallium nitride device on the same processing line under different input powers; calculating the mean value of the test result data under each input power; based on the mean value, building a physical-base large-signal model, setting physical parameters as nominal values, and then obtaining the initial values of fitting parameters; selecting devices corresponding to an upper edge curve and a lower edge curve;building physical-base large-signal models of a upper edge device and a lower edge device; substituting the fitting parameters into the physical-base large-signal models of the two edge devices, adjusting the fitting parameters and the physical parameters to ensure that the two models share the same set of fitting parameters and use different physical parameters, and therefore determining the fitting parameters and physical parameters of the physical-base large-signal models. According to the scheme, the extraction reliability of the fitting parameters and the accuracy of the physical parameters can be improved, and therefore the precision of the models is improved.

Description

technical field [0001] The invention relates to the technical field of gallium nitride high electron mobility transistors, in particular to a method and system for establishing a physical-based large-signal model of a microwave gallium nitride device. Background technique [0002] Gallium Nitride High Electron Mobility Transistor (GaN HEMT) has an extremely important application in microwave and millimeter wave solid-state power circuits due to its excellent characteristics such as high frequency, high power density, and high voltage resistance. In order to establish the relationship between process parameters and device microwave characteristics, and to analyze process stability and circuit yield, it is very necessary to establish an accurate large-signal model for GaN HEMT. There have been many related reports on the empirical-based large-signal model of GaN HEMT, and the modeling technology of the empirical-based large-signal model has become increasingly mature. However...

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Problems solved by technology

Although this work is aimed at the surface potential physical basis model, it does not solve the problem of accurate extraction of fitting parameters

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