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An etching process for ltps backplane wiring

A wiring and backplane technology, applied in the etching process of LTPS backplane wiring, can solve the problems of residual, unsuitable for mass production, and easy to etch TiAlTi with large area, so as to avoid film cracks and stabilize large scale. LTPS production, the effect of realizing large-scale LTPS production

Active Publication Date: 2019-11-15
TRULY HUIZHOU SMART DISPLAY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Although the patents and propose a method for etching TiAlTi with mixed gas, but high F-based gas and Cl 2 / BCl 3 The angle and CD of mixed etching TiAlTi on the LTPS segment production line are completely uncontrollable, basically it is undercut and bottom Ti residue (especially the loss area of ​​CD Loss)
High polymer gases such as N 2 , added to Cl 2 / BCl 3 Medium-etched TiAlTi is extremely prone to large-area residues, and the defective rate is above 95%, which is not suitable for mass production

Method used

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  • An etching process for ltps backplane wiring
  • An etching process for ltps backplane wiring
  • An etching process for ltps backplane wiring

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Embodiment

[0030] This embodiment provides an etching process for LTPS backplane wiring TiAlTi, including:

[0031] The first step uses etching gas and additive gas to etch the complete layer of TiAlTi or the remaining part of the underlying Ti at a high speed at an etching rate of 200nm / min to 600nm / min; or the first step uses an etching rate of 10nm / min to 200nm / min Firstly etch the upper layer of Ti at a slow speed, and then etch the complete layer of AlTi or the remaining part of the bottom Ti at a high speed at an etching rate of 200nm / min to 600nm / min; the second etching step also uses etching gas and additive gas at 10nm / min The etching rate of min~200nm / min is used for slow etching. If the complete layer of TiAlTi is etched in the first step, EPD cannot be used to stop the etching in the second step, but can only be stopped by time monitoring; if the remaining part of the bottom layer Ti is left in the first step, the second step can EPD is used to stop the etch. The selection ...

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Abstract

The invention relates to the technical field of a back panel, and discloses an etching process for wiring of a low-temperature poly-silicon back panel. By the etching process, stable LTPS production on a large scale can be achieved. The etching process comprises the steps of 1, etching a complete layer TiAlTi or a remaining part bottom layer Ti at high etching ratio being (200-600) nanometers perminute by employing an etching gas and an addition gas; or slowly etching an upper layer Ti at etching ratio being (10-200) nanometers per minute, and etching the complete layer AlTi or the remainingpart bottom layer Ti at high etching ratio being (200-600) nanometers per minute; and 2, slowing etching at etching ratio being (10-200) nanometers per minute by employing the etching gas and the additive gas.

Description

technical field [0001] The invention relates to the field of backplane technology, in particular to an etching process for LTPS backplane wiring. Background technique [0002] In the prior art, TiAlTi has become the mainstream wiring material of LTPS backplane technology. Usually the main gas for TiAlTi etching is chlorine (Cl 2 ) and boron trichloride (BCl 3 ). Since aluminum (Al) reacts extremely easily with chlorine (Cl), etching is performed in a chemical etching and isotropic manner. In this way, it becomes relatively difficult to control the Taper angle (slope angle) and CD Loss (line width loss) of TiAlTi. Especially for the layout of cells with different patterns (patterns) on the large plate, the etching effect around the large plate is deteriorated due to the high etching rate around the chlorine gas rotation. In addition, in the TiAlTi three-layer metal structure, the etching rate of Al (aluminum) is three or four times that of Ti (titanium). It is very easy...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/48
CPCH01L21/4846
Inventor 田金鹏铃木浩司张毅先任思雨谢志生苏君海李建华
Owner TRULY HUIZHOU SMART DISPLAY