A finfet-based single-ended read-write storage unit

Abstract

The invention discloses a single side reading and writingstorage unit based on FinFET. The single side writing and reading storage unit comprises a first FinFET pipe, a second FinFET pipe, a third FinFET pipe, a fourth FinFET pipe, a fifth FinFET pipe, a sixth FinFET pipe, a seventh FinFET pipe, a position line, a character line, a character writing line, an upper-character writing line, a lower-character writing line and a dotted line, the first FinFET pipe and the second FinFET pipe are both P-type FinFET pipes, and the third FinFET pipe, the fourth FinFET pipe, the fifth FinFET pipe, the sixth FinFET pipe and the seventh FinFET pipe are all N-type FinFET pipes. The single side writing and reading storage unit has the advantages that on the basis of guaranteeing the reading operation stability, a high writing noise limit can be obtained, the storage value result is stable, the circuit function is stable, the leaked power consumption is small, the delay is also small, and data is quickly and stably accessed.

Description

technical field

[0001] The invention relates to a single-end read-write storage unit, in particular to a FinFET-based single-end read-write storage unit. Background technique

[0002] As the process size enters the nanometer level, power consumption has become a problem that IC designers have to pay attention to. In most digital systems, memory power consumption accounts for an increasing proportion of total circuit power consumption. Static Random Access Memory (SRAM, Static Random Access Memory) is an important component in memory, so it is of great research significance to design SRAM with high stability and low power consumption. The SRAM is mainly composed of a storage array and other peripheral circuits, and the storage array is composed of a storage unit, which is the core of the SRAM, and the performance of the storage unit directly determines the performance of the SRAM. As the size of transistors continues to shrink, limited by the short-channel effect and the cu...

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