A finfet-based single-ended read-write storage unit

Abstract

The invention discloses a single side reading and writingstorage unit based on FinFET. The single side writing and reading storage unit comprises a first FinFET pipe, a second FinFET pipe, a third FinFET pipe, a fourth FinFET pipe, a fifth FinFET pipe, a sixth FinFET pipe, a seventh FinFET pipe, a position line, a character line, a character writing line, an upper-character writing line, a lower-character writing line and a dotted line, the first FinFET pipe and the second FinFET pipe are both P-type FinFET pipes, and the third FinFET pipe, the fourth FinFET pipe, the fifth FinFET pipe, the sixth FinFET pipe and the seventh FinFET pipe are all N-type FinFET pipes. The single side writing and reading storage unit has the advantages that on the basis of guaranteeing the reading operation stability, a high writing noise limit can be obtained, the storage value result is stable, the circuit function is stable, the leaked power consumption is small, the delay is also small, and data is quickly and stably accessed.

Description

technical field [0001] The invention relates to a single-end read-write storage unit, in particular to a FinFET-based single-end read-write storage unit. Background technique [0002] As the process size enters the nanometer level, power consumption has become a problem that IC designers have to pay attention to. In most digital systems, memory power consumption accounts for an increasing proportion of total circuit power consumption. Static Random Access Memory (SRAM, Static Random Access Memory) is an important component in memory, so it is of great research significance to design SRAM with high stability and low power consumption. The SRAM is mainly composed of a storage array and other peripheral circuits, and the storage array is composed of a storage unit, which is the core of the SRAM, and the performance of the storage unit directly determines the performance of the SRAM. As the size of transistors continues to shrink, limited by the short-channel effect and the cu...

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Problems solved by technology

The pull-up network composed of FinFET M1 and FinFET M2 in the storage unit can increase the reverse threshold voltage of the inverter composed of FinFET M1 and FinFET M3 and the inverter composed of FinFET M2 and FinFET M4 , the data is not easy to be destroyed during the read operation, and the read stability is better, but during the write operation (writing "1" and "0"), FinFET tube M4 and FinFET tube M6 will divide the write voltage, The written data value is small, resulting in a small noise margin, so that the result of the stored value written to the output terminal Q and the inverting output terminal Qb is unstable, and the circuit function is very unstable; and, by the FinFET tube The pull-down network composed of M3 and FINFET tube M4 has two leakage current paths when the storage unit is in the holding state, so the leakage current is large, resulting in large leakage power consumption and large delay, which is not conducive to fast Stable access to data

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