Radio frequency power amplifier circuit

A technology for power amplifiers and amplifier circuits, applied in power amplifiers, high-frequency amplifiers, improving amplifiers to improve efficiency, etc., can solve the problems of low bias current, amplitude and phase distortion that cannot be ignored, etc.

Inactive Publication Date: 2016-07-13
SHENYANG ZHONGKE MICROELECTRONICS
View PDF4 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As the input signal increases, in addition to the gain compression of the power amplifier, due to the low bias current, there will often be a gain expansion region. Generally, in the high power region, moderate gain expansion will compensate for the gain compression, making the power amplifier 1dB compression point delay, thereby improving linearity, but for non-constant envelope modulation systems, the peak-to-average ratio brings higher linearity requirements, and the amplitude and phase distortion introduced by gain expansion can often not be ignored

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Radio frequency power amplifier circuit
  • Radio frequency power amplifier circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] As shown in the figure, the present invention includes a power amplifier, a power control circuit, a linearization bias circuit and a bias boosting circuit. Output port, NPN transistor HBT 0 connected to the base of the HBT 0 The emitter is grounded, the HBT 0 The collector of the power amplifier is connected to the output port of the power amplifier, the input port of the bias boosting circuit, and one end of the inductor, and the other end of the inductor is connected to the power supply Vcc; the input port of the linearization bias circuit is connected to the output port of the power control circuit.

[0016] The power control circuit is composed of resistor R1, resistor R2, NPN triode HBT 1 and NPN transistor HBT 2 Composition, one end of R1 is connected to the power supply Vcon, and the other end of R1 is respectively connected to HBT 1 Base, HBT 2 connected to the emitter of the HBT 1 The collector is connected to the input port of the linearization bias cir...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a radio frequency power amplifier circuit, belongs to the technical field of communication technology, and especially relates to a radio frequency power amplifier circuit. The invention provides a radio frequency power amplifier circuit which has a function of power control and improving gain expansion. The circuit comprises a power amplifier, a power control circuit, a linearizing bias circuit, and a bias boost circuit. The structure features are that the input port of the power amplifier is connected with the output port of the linearizing bias circuit, the output port of the bias boost circuit, the base electrode of a NPN audion HBT0. The emitting electrode of the HBT0 is connected with ground. The collector electrode of the HBT0 is connected with the output port of the power amplifier, the input port of the bias boost circuit, and one end of an inductor. The other end of the inductor is connected with a power supply Vcc. The input port of the linearizing bias circuit is connected with the output port of the power control circuit.

Description

technical field [0001] The invention belongs to the technical field of communication, in particular to a radio frequency power amplifier circuit. Background technique [0002] As the distance between the mobile device and the base station varies, the power of the signal transmitted by the power amplifier in the mobile device will also be adjusted accordingly during communication. Usually the output power of the power amplifier is in the range of medium and low power, and only a few suburbs far away from the base station can reach high output power. Therefore, under high and low output power, different bias currents can be used to significantly reduce the DC consumption in low power state, thereby improving the overall efficiency of the power amplifier and prolonging the service life of the battery. [0003] On the other hand, the peak-to-average ratio problem brought about by multi-carrier technology in modern wireless communication makes wireless transmitter designers face...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H03F3/20H03F3/189H03F1/02
Inventor 郝明丽
Owner SHENYANG ZHONGKE MICROELECTRONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap