A method and system for simulating the circuit characteristics of BJT devices after irradiation
A simulation method and a technology of electrical characteristics, applied in the field of radiation modeling, can solve problems such as lack of and inability to simulate circuit effects, and achieve the effects of improving applicability, improving circuit simulation accuracy, and improving accuracy
Active Publication Date: 2021-12-14
INST OF ELECTRONICS ENG CHINA ACAD OF ENG PHYSICS
View PDF9 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
However, for the modeling of BJT devices under the radiation environment effect, there is currently a lack of a general, high-accuracy, and suitable device modeling method for engineering applications, so it is impossible to simulate the effect of the irradiated circuit
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0045] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0046] The purpose of the present invention is to provide a method and system for simulating the circuit characteristics of BJT devices after irradiation, which can model BJT devices in an irradiation environment to extract BJT device parameters, thereby improving the accuracy of circuit simulation in an irradiation environment .
[0047]In order to make the above objects, features and advantages of the present invention more comprehensible, the present invent...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
A method and system for simulating the circuit characteristics of a BJT device after irradiation. The method includes: extracting the device model parameters of the BJT device before irradiation; obtaining the corresponding excess base current under different irradiation conditions; determining the relationship between irradiation conditions and excess base current according to the excess base current; using semiconductor device modeling software Extract the parasitic diode model parameters corresponding to the redundant base current; determine the relationship between the redundant base current-parasitic diode model parameters according to the parasitic diode model parameters; determine the corresponding relationship between the parasitic diode parameters and the radiation conditions; The irradiation model of the BJT device; according to the irradiation model of the BJT device, the circuit containing the BJT device after irradiation is simulated. The simulation method and system provided by the invention can accurately establish a compact model for the electrical characteristics of the BJT device under irradiation conditions, thereby performing accurate simulation of the radiation effect of the BJT circuit.
Description
technical field [0001] The invention relates to the field of radiation modeling, in particular to a method and system for simulating the characteristics of a circuit of a BJT device after radiation. Background technique [0002] Radiation effect is an important factor that causes the degradation of semiconductor devices and the failure of integrated circuits in the space environment. Bipolar Junction Transistor (BJT) has good current driving capability, linearity, low noise and excellent matching capability, and is widely used in aviation equipment and other fields. However, BJT devices are very sensitive to the dose environment in the space radiation environment. In the radiation environment, the device is seriously degraded, the base current increases, and the magnification factor decreases. Therefore, evaluating the degradation of devices in radiation environments such as space is the basis for evaluating the degradation of integrated circuits in radiation environments. ...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): G06F30/20
CPCG06F30/367
Inventor 方雯李顺钟乐程劼任尚清代刚
Owner INST OF ELECTRONICS ENG CHINA ACAD OF ENG PHYSICS