Cover plate applied to polycrystalline silicon ingot casting crucible

Abstract

The invention discloses a cover plate applied to a polycrystalline silicon ingot casting crucible. The cover plate comprises a cover plate body, wherein an air inlet hole is formed in the cover platebody, an air flow stopping plate is arranged under the cover plate body, the position of the air flow stopping plate is corresponding to the position of the air inlet hole, and a gap for air flow to be exhausted is reserved between the cover plate body and the air flow stopping plate. According to the cover plate for the polycrystalline silicon ingot casting crucible disclosed by the invention, hanging holes are formed at the periphery of the air inlet hole; then the air flow stopping plate is suspended downwards through a carbon / carbon suspension screw rod, a temperature measuring hole is formed in the center of the air flow stopping plate, and air flow out of an air inlet pipe is directly blown on the air flow stopping plate and scatters all round; as a bounce face of the air flow rises,vortex occurrence is reduced, impurities on the surface of a polycrystalline silicon ingot are reduced, and product quality is beneficial to being improved.

Description

technical field [0001] The invention relates to polysilicon production equipment, in particular to a cover plate for a polysilicon ingot crucible. Background technique [0002] With the resolution of the texturing problem, diamond wire-cut polycrystalline has experienced explosive growth. Diamond wire-cut polycrystalline is facing many challenges, the most important of which is the impurity content. Compared with monocrystalline silicon, the higher carbon and nitrogen impurities in cast polycrystalline silicon ingots will cause tangent marks, TTV, steel wire wear, and broken wires during the cutting process, which will cause poor electrical performance such as low efficiency and leakage when reflected on the battery side. . Impurity content will become the biggest obstacle to the process of diamond wire cutting thinning. In the production process of commonly used polysilicon ingot crucible, the argon gas coming out from the intake pipe is directly blown on the surface of t...

AI Technical Summary

Problems solved by technology

Compared with monocrystalline silicon, the higher carbon and nitrogen impurities in cast polycrystalline silicon ingots will cause tangent marks, TTV, steel wire wear, and broken wires during the cutting process, which will cause poor electrical performance such as low efficiency and leakage when reflected on the battery side.

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