Charge pump structure

Abstract

The invention discloses a charge pump structure, and belongs to the technical field of electronic circuits. The structure includes a reference ground potential generating unit, a level conversion unit, a non-overlapping clock generating unit, and a charge pump unit. The reference ground potential generating unit is used for generating a reference ground potential, wherein the power voltage is at ahigh level, and a ground voltage is at a low level. The level conversion unit is used for generating a first overlapping clock signal and a second overlapping clock signal, wherein a control signal is a clock control signal, a power voltage is at a high level, and a ground voltage is a reference ground potential. The non-overlapping clock signal generating unit is used for respectively convertingthe first overlapping clock signal and the second overlapping clock signal into a first non-overlapping clock signal and a second non-overlapping clock signal. A power voltage of the charge pump unit5 is at a high level, and a ground voltage is at a low level. The high level is boosted through pumping under the control of the first non-overlapping clock signal and the second non-overlapping clock signal so as to generate an output signal of the charge pump structure. The structure improves the charging efficiency of the charge pump and reduces the occupied area.

Description

technical field [0001] The invention belongs to the technical field of electronic circuits and relates to a charge pump structure. Background technique [0002] At this stage, with the widespread use of memory, the writing and erasing of data requires an operating voltage much higher than the power supply voltage, so a charge pump can be used to pump up a lower power supply voltage to obtain a high operating voltage, while the traditional crossover The coupled charge pump has efficiency loss due to the existence of collusion phenomenon and cascaded charge pumps. The collusion phenomenon is that the branch circuit leakage phenomenon occurs in the charge pump during the turn-on and turn-off process of the MOS transistor. [0003] Traditional cross-coupled charge pump structures such as figure 2 As shown in the charge pump unit 50 in the middle, the generation of the cross-talk phenomenon is related to the boost transistors (MN4, MN5) and switch transistors (MP10, MP11) in the...

AI Technical Summary

Problems solved by technology

[0004] In view of the low efficiency caused by collusion in the above-mentioned traditional cross-coupled charge pump, the present invention proposes a charge pump structure based on the cross-coupled charge pump model, which is used to improve the efficiency of the charge pump and can solve the above-mentioned shortcomings of the traditional charge pump , effectively avoiding the collusion phenomenon, eliminating the threshold loss caused by the body effect, and improving the charging efficiency of the charge pump; at the same time, the level conversion unit is used, so that the charge pump unit can achieve high-level output with only a single stage, effectively Reduced footprint and reduced costs

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