Semiconductor device and production method thereof
A manufacturing method and semiconductor technology, which are applied to semiconductor devices of memory arrays and peripheral circuits and their manufacturing, three-dimensional memory and their manufacturing fields, can solve problems such as time-consuming and cost-intensive, and achieve improved productivity, reduced production process steps, and reduced production costs. The effect of manufacturing cost
Active Publication Date: 2018-09-28
YANGTZE MEMORY TECH CO LTD
View PDF4 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
In addition, since the production process of semiconductor devices consumes a lot of time and money, there is a demand in this field for a production method that is simple in process but can obtain the same effect from the viewpoint of economy
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0035] Specific implementations of the present invention will be described below. It should be noted that in the process of specific descriptions of these implementations, for the sake of concise description, it is impossible for this specification to describe all the features of the actual implementations in detail. It should be understood that, in the actual implementation process of any embodiment, just like in the process of any engineering project or design project, in order to achieve the developer's specific goals and to meet system-related or business-related constraints, Often a variety of specific decisions are made, and this can vary from one implementation to another. In addition, it will be appreciated that while such development efforts may be complex and lengthy, the technology disclosed in this disclosure will be Some design, manufacturing or production changes based on the content are just conventional technical means, and should not be interpreted as insuffic...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention relates to a semiconductor device for three-dimensional memories and a production method thereof. The semiconductor device comprises a first substrate; one or more three-dimensional memory arrays on the first substrate; an interconnection layer on the three-dimensional memory arrays; a peripheral circuit on the interconnection layer; and a second substrate on the peripheral circuit,wherein at least one of the first substrate and the second substrate is the substrate of a first conductive type, a doping trap of a second conductive type located at a position with preset depth to the surface of the substrate is not formed, and at least one of the first substrate and the second substrate is thinned. According to the semiconductor device with the structure, a production technology is simplified, and the cost is reduced.
Description
technical field [0001] The present invention relates to a semiconductor device and a manufacturing method thereof, in particular to a three-dimensional memory and a manufacturing method thereof, and further relates to a semiconductor device used for a memory array and a peripheral circuit of a three-dimensional memory and a manufacturing method thereof. Background technique [0002] Generally, in an information processing device such as a computer, an information storage device such as a hard disk is used. A well-known storage device is a NAND type flash memory. Flash memory (Flash memory) has been widely used in various storage media (such as smart cards, memory cards, etc.) and is a very important semiconductor device. It uses FN Fowler-Nordheim tunneling to write and erase data. [0003] With the continuous pursuit of higher storage density per unit space, major mainstream manufacturers are currently investing in the manufacture of 3D flash memory (eg, 3D NAND) from 2D f...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/11529H01L27/11551H01L27/11573H01L27/11578H10B41/41H10B41/20H10B43/20H10B43/40
CPCH10B41/41H10B41/20H10B43/40H10B43/20
Inventor 金东浚闾锦吕震宇
Owner YANGTZE MEMORY TECH CO LTD