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Super junction device terminal structure

A terminal structure, superjunction device technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as device failure, current concentration, etc., to reduce switching loss, reverse recovery charge reduction, increase The effect of switching speed and reliability of termination

Active Publication Date: 2018-09-28
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In reverse turn-off, since the potential of the p-column in the terminal withstand voltage region is floating, excess carriers can only be extracted through the transition region, so when the extraction of excess carriers in the cell region is completed, there are still a large number of Carriers are not extracted, and current concentration is prone to occur at the edge of the main junction in the transition region, causing dynamic avalanche to cause device failure in this region

Method used

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Examples

Experimental program
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Effect test

Embodiment 1

[0023] A superjunction device termination structure, such as figure 2 As shown, there are terminal region I and transition region II in sequence from the edge of the device to the active region of the device, and the terminal region I and transition region II share the first conductivity type semiconductor substrate 1 and the semiconductor substrate above the first conductivity type semiconductor substrate 1. the first conductivity type epitaxial layer 2;

[0024] The terminal region I includes: one or more mutually independent terminal region second conductivity type column regions 31 located in the first conductivity type epitaxial layer 2, the upper surface of the terminal region second conductivity type column region 31 is connected to the first The upper surface of the epitaxial layer 2 of conductivity type is even; the stop ring 5 located on the upper side of the epitaxial layer 2 of the first conductivity type away from the active region;

[0025] The transition regio...

Embodiment 2

[0031] On the basis of Embodiment 1, this embodiment provides a super junction termination structure in which the stud region extends to the entire epitaxial layer, such as image 3shown. In Embodiment 1, the insulating dielectric region 6 is not in contact with the semiconductor substrate of the first conductivity type, and there is a part of the epitaxial layer 2 of the first conductivity type separating the two, and this part of the epitaxial layer 2 of the first conductivity type is equivalent to half The buffer layer under the superjunction device structure plays the role of adjusting the electric field of the epitaxial layer, and can increase the doping tolerance of the P-type column region, so the process is easier to realize. In this embodiment, the insulating dielectric region 6 in the transition region II and the second conductivity type stud region 31 in the terminal region extend to the bottom of the first conductivity type epitaxial layer 2 and are in contact with...

Embodiment 3

[0033] On the basis of Embodiment 1, this embodiment provides a super junction termination structure with multiple composite insulating dielectric regions, such as Figure 4 shown. In this embodiment, two or more different insulating dielectric materials are provided in the transition region II, which are the first insulating dielectric material region 7 and the second insulating dielectric material region 8, and the rest of the structure is the same as that of the first embodiment. Because different insulating dielectric materials have different dielectric constants, an electric field peak value will be introduced at the interface between the two, and this electric field peak value can play a role in adjusting the internal electric field of the first conductivity type epitaxial layer 2, so this embodiment has the effect of implementing In addition to the advantages of Example 1, the electric field in the epitaxial layer 2 of the first conductivity type can be distributed more...

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Abstract

The invention provides a super junction device terminal structure. The structure is characterized in that a terminal area and a transition area are sequentially arranged from a device edge to a deviceactive area and share a first conduction type semiconductor substrate and a first conduction type epitaxial layer, wherein the terminal area comprises one or more terminal area second conduction typecolumn areas, and a stop ring; the transition area comprises one or more transition area second conduction type column areas, and a second conduction type body area; an insulation medium area is arranged below each transition area second conduction type column area; the upper surface of each insulation medium area is in contact with the corresponding transition area second conduction type columnarea; and the depth(s) of the lower surface(s) of the insulation medium area(s) is / are identical to the depth(s) of the terminal area second conduction type column area(s). The super junction device terminal structure provided by the invention has the advantages that the number of reverse recovery charges is reduced without effects on the voltage withstanding capability of a super junction device,so that the phenomenon of current convergence at a main junction edge of a terminal transition area during reverse recovery is avoided, the switching loss of the device is reduced, and the switchingspeed of the super junction device and the terminal reliability are improved.

Description

technical field [0001] The invention belongs to the technical field of power semiconductors, and in particular relates to a terminal structure of a super junction device. Background technique [0002] The super junction device is a very important power device in the medium and high voltage field. Its basic structure is composed of alternately arranged p-columns and n-columns, and follows the basic principle of charge balance. The proposal of this structure breaks the "silicon limit" and is A major milestone in the history of power device development. The super junction MOSFET introduces a super junction structure into the drift region of the traditional power MOSFET, which greatly improves the trade-off relationship between the breakdown voltage and on-resistance of the power MOSFET, and thus is widely used in power systems. In the blocking state of the device, the p-column and n-column in the superjunction structure are completely depleted to each other. Under the modulati...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/78H01L21/336
CPCH01L29/0634H01L29/66666H01L29/7827
Inventor 任敏何文静宋炳炎李泽宏高巍张金平张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA