Material for organic electroluminescence device
A technology of electronic devices and groups, applied in the field of materials for organic electroluminescent devices, can solve problems such as expensive and complicated processes
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Synthetic example
[0137] The scheme of synthetic embodiment compound 1
[0138]
[0139] Synthesis of ArL group
[0140] Synthesis of compound Int1.1
[0141]
[0142] 30g (97.5mmol) of 2-bromo-7-chloro-9,9-dimethyl-9H-fluorene (see JP 2003277305 A), 25.5g (107.3mmol) of (9,9-dimethylfluorene-2- Base) boronic acid 90g (390mmol), 0.9g (4mmol) palladium (II) acetate and 3.6g (11.7mmol) tri (o-tolyl) phosphine in 1L toluene, di Mix in alkane and water (1:1:1) and stir at reflux overnight. After cooling to room temperature, 200 mL of toluene was added, the organic phase was separated and washed with water (2 x 200 mL), and the combined organic phases were concentrated under reduced pressure. The residue was purified by recrystallization from toluene / heptane.
[0143] Yield: 39.1 g (93 mmol; 96%).
[0144] The following compounds can be synthesized in a similar manner:
[0145]
[0146] Synthesis of ArL1
[0147]
[0148] 40g (95mmol) Int1.1, 38.6g (152mmol) bis-(pinacolate) dibo...
Embodiment V1
[0196] The substrate pretreatment of embodiment V1, E1 to E8:
[0197] A glass plate with structured ITO (50nm, indium tin oxide) was coated with 20nm PEDOT:PSS (poly(3,4-ethylenedioxythiophene), poly(styrene-sulfonate, CLEVIOS TM P VP AI 4083, from Heraeus Precious Metals GmbH, Germany, was spin-coated from a water-based solution) as a buffer layer to form the substrate on which the OLED device was fabricated.
[0198] The OLED device basically has the following layer structure:
[0199] - base,
[0200] -ITO (50nm),
[0201] - buffer layer (20nm),
[0202] - a hole transport layer (HTL),
[0203] - optional interlayer (IL),
[0204] - emissive layer (EML),
[0205] - optional hole blocking layer (HBL),
[0206] - Electron Transport Layer (ETL),
[0207] - electron injection layer (EIL),
[0208] -cathode.
[0209] The cathode was formed from an aluminum layer with a thickness of 100 nm. The detailed stack sequence is shown in Table A. Table C shows the materials ...
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