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Method of detecting alignment offset

A technology of row direction and control gate, which is applied in the direction of semiconductor/solid-state device testing/measurement, electrical components, circuits, etc., and can solve the problem of inability to effectively detect whether the contact hole and the control gate are aligned

Active Publication Date: 2018-10-23
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a method for detecting alignment deviation, so as to solve the problem that the existing technology cannot effectively detect whether the contact hole and the control grid are aligned

Method used

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  • Method of detecting alignment offset

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Embodiment Construction

[0042] The specific implementation manner of the present invention will be described in more detail below with reference to schematic diagrams. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0043] refer to figure 1 , which is a schematic diagram of the method for detecting alignment offset provided by this embodiment, such as figure 1 As shown, the method for detecting alignment deviation includes:

[0044] S1: provide the substrate;

[0045] S2: Form multiple columns of control gate layers on the shallow trench isolation structure, two adjacent columns of the control gate layers are arranged alternately, each column of the control gate layers includes a plurality of control gates, and the contro...

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Abstract

The invention provides a method of detecting an alignment offset. All-in resistance values of two adjacent columns of contact holes are compared to determine whether displacement between the contact holes and a control gate satisfies the control requirement. Because the contact holes are formed at the two ends of the control gate, the contact area between the contact holes and the control gate changes when any displacement of the contact holes and the control gate occurs, so that the resistance values of the contact holes change. Therefore, whether the displacement between the contact holes and a control gate satisfies the control requirement can be determined simply and effectively by comparing whether the all-in resistance values of two adjacent columns of contact holes are identical. Ifany displacement occurs, the machine is adjusted to avoid production of defective products in batches.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for detecting alignment deviation. Background technique [0002] Flash memory (Flash Memory) is a long-life non-volatile (it can still maintain the stored data information in the case of power failure) memory, because it can still save data when the power is turned off, flash memory is usually used to save settings Information, such as saving data in the computer's BIOS (basic program), PDA (personal digital assistant), digital camera, etc. [0003] With the development of integrated circuit technology and the scaling down of key dimensions, the size of the memory cell of flash memory is also further reduced. When there is a slight deviation in the alignment of the contact hole of the flash memory cell and the polysilicon gate, it will cause the failure of the overall performance of the device. , or the programming fails. As the distance between the control g...

Claims

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Application Information

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IPC IPC(8): H01L21/66
CPCH01L22/12
Inventor 曹子贵
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP